STQ1NK60ZR-AP STMicroelectronics 600V N-Channel MOSFET, TO-220 Package

  • This device provides efficient switching capabilities that enhance overall circuit performance and energy management.
  • With a high voltage rating, it supports demanding electrical environments, ensuring safe operation under stress.
  • The compact package reduces board space requirements, facilitating integration into densely packed electronic designs.
  • STQ1NK60ZR-AP is suitable for power supply applications, improving system reliability and thermal management.
  • Built to meet rigorous quality standards, it offers consistent performance and long-term operational stability.
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STQ1NK60ZR-AP Overview

The STQ1NK60ZR-AP is a high-performance N-channel MOSFET designed for efficient switching and power management in industrial and consumer electronics. With a voltage rating of 600V and low on-resistance, this device enables reduced conduction losses and enhanced thermal performance. Ideal for high-frequency applications, it supports fast switching speeds while maintaining robust avalanche energy capability. This MOSFET is well-suited for systems requiring high reliability and efficient power conversion. For sourcing and detailed specifications, visit IC Manufacturer.

STQ1NK60ZR-AP Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Continuous Drain Current (ID) at 25??C1.7A
Drain Current Pulsed (IDM)6.8A
Gate Threshold Voltage (VGS(th))2 – 4V
Drain-Source On-Resistance (RDS(on)) at VGS=10V1.3??
Total Gate Charge (Qg)30nC
Input Capacitance (Ciss)300pF
Maximum Power Dissipation (PD)25W
Junction Temperature Range (Tj)-55 to 150??C

STQ1NK60ZR-AP Key Features

  • High Voltage Rating: Supports up to 600V drain-source voltage, enabling use in demanding power applications.
  • Low On-Resistance: Minimal conduction losses at 1.3 ?? (VGS=10V) improve overall efficiency and thermal management.
  • Fast Switching Capability: Optimized gate charge and input capacitance ensure rapid switching for high-frequency designs.
  • Robust Avalanche Energy Handling: Provides reliability under transient voltage conditions, enhancing device longevity in rugged environments.

Typical Applications

  • Switch mode power supplies (SMPS) requiring efficient high-voltage switching with low conduction losses, suitable for industrial and consumer electronics power management.
  • Motor control circuits benefiting from rapid switching and thermal stability for reliable operation under variable loads.
  • Lighting ballasts and electronic transformers that demand high voltage tolerance and fast switching to maintain performance and efficiency.
  • Inverter and converter circuits used in renewable energy systems where high voltage and efficient power conversion are critical.

STQ1NK60ZR-AP Advantages vs Typical Alternatives

This MOSFET offers an excellent balance of high voltage tolerance and low on-resistance, providing enhanced efficiency and reduced heat generation compared to standard devices. Its fast switching speeds and robust avalanche energy capacity improve reliability in dynamic environments. These characteristics make it a superior choice for engineers seeking optimized power conversion with dependable long-term operation.

STQ1NK60ZR-AP Brand Info

The STQ1NK60ZR-AP is manufactured by STMicroelectronics, a global leader in semiconductor technology known for innovative power devices. STMicroelectronics specializes in high-voltage MOSFETs designed to meet rigorous industrial and consumer requirements. Their products are widely adopted for energy-efficient power management solutions, delivering trusted performance and support for system designers worldwide.

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What is the maximum drain-source voltage rating for this MOSFET?

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