STPST8H100SFY STMicroelectronics 100V N-Channel MOSFET, TO-220 Package

STPST8H100SFY Overview

The STPST8H100SFY is a high-voltage N-channel Power MOSFET designed to deliver superior performance in power switching applications. Featuring an 800 V drain-source voltage rating and low on-resistance, this device supports efficient energy management in demanding industrial and automotive environments. Its rugged construction ensures reliable operation under high voltage stress and fast switching speeds, making it ideal for power converters, motor controls, and lighting systems. Engineers and sourcing specialists benefit from its compact surface-mount package, which facilitates integration into space-constrained designs. For detailed specifications and further product support, visit IC Manufacturer.

STPST8H100SFY Technical Specifications

STPST8H100SFY Key Features

• High Voltage Tolerance: The 800 V rating enables use in high-voltage switching applications, providing robustness for industrial power systems.
• Low On-Resistance: Minimizes conduction losses, improving overall efficiency and reducing heat generation in power stages.
• Fast Switching Capability: Enables high-frequency operation, beneficial for compact and efficient power converters.
• Robust Thermal Performance: Supports operation up to 150??C junction temperature, ensuring reliability under harsh environmental conditions.
• Compact Surface-Mount Package: Facilitates integration into densely packed PCB layouts, optimizing space and assembly cost.

Typical Applications

• Switch-mode power supplies (SMPS) requiring efficient high-voltage switching for energy conversion and regulation in industrial equipment.
• Motor control circuits where precise and robust power switching is essential for variable speed drives and automation.
• Lighting ballasts and electronic lighting control systems requiring high-voltage MOSFETs for reliable operation.
• DC-DC converters in automotive and industrial systems benefiting from low on-resistance and fast switching for improved efficiency.

STPST8H100SFY Advantages vs Typical Alternatives

This device offers a compelling combination of high voltage rating and low on-resistance, which translates into reduced conduction losses and improved energy efficiency compared to standard MOSFETs. Its robust thermal and switching performance enhance reliability in demanding industrial environments. The compact surface-mount design further supports modern, space-efficient PCB layouts. Overall, it provides a superior solution for engineers seeking durable, high-performance power switching components.

STPST8H100SFY Brand Info

The STPST8H100SFY is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in high-performance power MOSFETs and discrete components widely used in industrial, automotive, and consumer electronics sectors. This product reflects ST??s commitment to innovation, delivering reliable, energy-efficient power management devices that meet rigorous industry standards for performance and durability.

FAQ

What is the maximum drain-source voltage for this MOSFET?

The maximum drain-source voltage (V_DS) is 800 V, which allows the device to handle high-voltage switching tasks often found in industrial and automotive applications.

How does the on-resistance affect device performance?

Lower on-resistance reduces conduction losses during operation, enhancing efficiency and minimizing heat generation. For this MOSFET, the R_DS(on) is 0.67 ?? at a gate voltage of 10 V, which helps