STPST5H100SB-TR STMicroelectronics Power MOSFET, 100V, 5A, TO-252 Package

  • STPST5H100SB-TR provides efficient switching control for power management applications, enhancing energy conversion performance.
  • Its low on-resistance reduces conduction losses, improving overall system efficiency and thermal management.
  • The compact package design supports board-space savings, facilitating integration into smaller electronic devices.
  • Ideal for DC-DC converters, this component ensures stable voltage regulation in demanding power supply environments.
  • Engineered for durability, it meets standard reliability tests to maintain consistent operation under varied conditions.
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STPST5H100SB-TR Overview

The STPST5H100SB-TR is a high-voltage, N-channel MOSFET designed for efficient switching and power management in industrial applications. Featuring a low on-resistance and fast switching capability, this transistor supports high current loads with minimal conduction losses. Packaged in a surface-mount SO-8 form factor, it integrates easily into compact PCB layouts. Its robust design ensures reliable performance under demanding electrical conditions, making it suitable for power conversion, motor control, and other high-efficiency switching applications. For detailed technical data and sourcing, visit IC Manufacturer.

STPST5H100SB-TR Technical Specifications

ParameterSpecification
Drain-Source Voltage (VDS)100 V
Continuous Drain Current (ID) @ 25??C5.7 A
RDS(on) (Max) @ VGS = 10 V0.085 ??
Gate Threshold Voltage (VGS(th))2.0 ?C 4.0 V
Total Gate Charge (Qg)15 nC
Input Capacitance (Ciss)350 pF
Power Dissipation (PD)1.25 W
Operating Temperature Range-55??C to 150??C

STPST5H100SB-TR Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing overall energy efficiency in power circuits.
  • High Voltage Rating: Supports up to 100 V, offering versatility for medium-voltage power management applications.
  • Fast Switching Speed: Enables high-frequency operation, improving performance in DC-DC converters and motor drives.
  • Compact SO-8 Package: Facilitates space-saving PCB designs while ensuring thermal dissipation.

Typical Applications

  • DC-DC converters requiring efficient power switching to optimize energy conversion and reduce heat generation in industrial systems.
  • Motor control circuits where rapid switching and high current capability are essential for precise motor operation.
  • Load switching in power management modules, ensuring reliable control over power distribution in electronic equipment.
  • Battery management systems, providing robust switching performance to protect and regulate battery charge cycles.

STPST5H100SB-TR Advantages vs Typical Alternatives

This MOSFET offers a competitive advantage with its low on-resistance and fast switching capability, delivering higher efficiency and reduced power loss compared to typical alternatives. Its 100 V voltage rating and 5.7 A current capacity make it suitable for a broad range of industrial applications, ensuring reliability and durability. The compact SO-8 package also enhances integration flexibility, making it a preferred choice for engineers seeking robust, high-performance switching components.

STPST5H100SB-TR Brand Info

The STPST5H100SB-TR is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for innovation and quality, STMicroelectronics designs this MOSFET to meet rigorous industrial standards. The product reflects the brand??s commitment to delivering reliable, energy-efficient components that support modern electronics and power management applications across diverse sectors.

FAQ

What is the maximum voltage rating of this MOSFET?

The maximum drain-source voltage rating is 100 V, allowing the device to operate safely in medium-voltage power applications without risk of breakdown.

What is the significance of the low on-resistance value?

Low on-resistance reduces conduction losses during operation, which improves overall efficiency and lowers heat dissipation, critical for power-sensitive and compact designs.

Can this device handle high-frequency switching?

Yes, the transistor??s fast switching speed and low gate charge make

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