STPST5H100SB-TR Overview
The STPST5H100SB-TR is a high-voltage, N-channel MOSFET designed for efficient switching and power management in industrial applications. Featuring a low on-resistance and fast switching capability, this transistor supports high current loads with minimal conduction losses. Packaged in a surface-mount SO-8 form factor, it integrates easily into compact PCB layouts. Its robust design ensures reliable performance under demanding electrical conditions, making it suitable for power conversion, motor control, and other high-efficiency switching applications. For detailed technical data and sourcing, visit IC Manufacturer.
STPST5H100SB-TR Technical Specifications
| Parameter | Specification |
|---|---|
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) @ 25??C | 5.7 A |
| RDS(on) (Max) @ VGS = 10 V | 0.085 ?? |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Total Gate Charge (Qg) | 15 nC |
| Input Capacitance (Ciss) | 350 pF |
| Power Dissipation (PD) | 1.25 W |
| Operating Temperature Range | -55??C to 150??C |
STPST5H100SB-TR Key Features
- Low On-Resistance: Minimizes conduction losses, enhancing overall energy efficiency in power circuits.
- High Voltage Rating: Supports up to 100 V, offering versatility for medium-voltage power management applications.
- Fast Switching Speed: Enables high-frequency operation, improving performance in DC-DC converters and motor drives.
- Compact SO-8 Package: Facilitates space-saving PCB designs while ensuring thermal dissipation.
Typical Applications
- DC-DC converters requiring efficient power switching to optimize energy conversion and reduce heat generation in industrial systems.
- Motor control circuits where rapid switching and high current capability are essential for precise motor operation.
- Load switching in power management modules, ensuring reliable control over power distribution in electronic equipment.
- Battery management systems, providing robust switching performance to protect and regulate battery charge cycles.
STPST5H100SB-TR Advantages vs Typical Alternatives
This MOSFET offers a competitive advantage with its low on-resistance and fast switching capability, delivering higher efficiency and reduced power loss compared to typical alternatives. Its 100 V voltage rating and 5.7 A current capacity make it suitable for a broad range of industrial applications, ensuring reliability and durability. The compact SO-8 package also enhances integration flexibility, making it a preferred choice for engineers seeking robust, high-performance switching components.
🔥 Best-Selling Products

Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package

Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring

Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package

Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
STPST5H100SB-TR Brand Info
The STPST5H100SB-TR is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for innovation and quality, STMicroelectronics designs this MOSFET to meet rigorous industrial standards. The product reflects the brand??s commitment to delivering reliable, energy-efficient components that support modern electronics and power management applications across diverse sectors.
FAQ
What is the maximum voltage rating of this MOSFET?
The maximum drain-source voltage rating is 100 V, allowing the device to operate safely in medium-voltage power applications without risk of breakdown.
🌟 Featured Products

“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”

QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package

0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality

1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
What is the significance of the low on-resistance value?
Low on-resistance reduces conduction losses during operation, which improves overall efficiency and lowers heat dissipation, critical for power-sensitive and compact designs.
Can this device handle high-frequency switching?
Yes, the transistor??s fast switching speed and low gate charge make






