STPST12H100SF STMicroelectronics IGBT Transistor, High-Speed, TO-247 Package

STPST12H100SF Overview

The STPST12H100SF is a high-voltage N-channel MOSFET designed for efficient power switching in industrial and automotive applications. Featuring a robust 100 V drain-source voltage rating and low on-resistance, it enables reduced conduction losses and improved thermal performance. The device supports fast switching speeds and enhanced ruggedness, making it suitable for demanding environments where reliability is critical. Its compact package and optimized electrical characteristics facilitate integration into power management circuits, motor drives, and DC-DC converters. For comprehensive technical details and sourcing, visit IC Manufacturer.

STPST12H100SF Technical Specifications

STPST12H100SF Key Features

• Low on-resistance: Minimizes conduction losses, improving overall system efficiency and thermal management.
• High voltage rating: Supports up to 100 V drain-source voltage, suitable for a wide range of industrial power applications.
• Fast switching capability: Enables higher frequency operation for compact, efficient power circuits.
• Robust thermal performance: Wide operating junction temperature range ensures reliable operation in harsh environments.

Typical Applications

• DC-DC converters in industrial power supplies where efficient switching and thermal reliability are critical.
• Motor control circuits requiring high-voltage, low-loss MOSFETs for smooth operation and energy savings.
• Automotive power management systems demanding rugged devices with stable performance under varying temperatures.
• General purpose switching in battery-powered and embedded systems benefiting from compact packaging and low gate charge.

STPST12H100SF Advantages vs Typical Alternatives

This MOSFET offers a superior balance of low on-resistance and high voltage rating, reducing conduction losses while handling demanding operating conditions. Compared to typical alternatives, its fast switching capability and robust thermal range improve efficiency and reliability in industrial environments. The device??s compact TO-252 package also facilitates easier integration into space-constrained designs without sacrificing performance.

STPST12H100SF Brand Info

The STPST12H100SF is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Renowned for innovation in power management, STMicroelectronics provides reliable, high-performance MOSFETs widely used in automotive, industrial, and consumer electronics sectors. This product benefits from the company??s extensive expertise in silicon technology and quality control, ensuring robust performance and long-term availability for demanding applications.

FAQ

What is the maximum drain-source voltage the STPST12H100SF can handle?

The device is rated for a maximum drain-source voltage of 100 V, making it suitable for applications requiring high-voltage switching and protection against voltage spikes.

How does the on-resistance impact the efficiency of this MOSFET?

Lower on-resistance reduces conduction losses during operation, which improves overall efficiency and reduces heat generation. This model??s 12 m?? on-resistance at 10 V gate drive helps minimize power dissipation.

What package type does the STPST12H100SF come in, and why is it beneficial?

It is housed in a TO-252 (DPAK) package, which offers a compact footprint and efficient thermal dissipation, suitable for automated assembly and space-constrained designs.

Can this MOSFET operate reliably in high-temperature environments?