The STPST10H100SFY is a high-voltage Power MOSFET designed for efficient switching applications within industrial and automotive sectors. Featuring a 100 V drain-to-source voltage and a low on-resistance, this device offers optimized conduction and switching performance. Its robust avalanche energy rating ensures improved reliability under transient conditions. Engineered for compactness and thermal efficiency, it supports enhanced power density in system designs. The product is ideal for engineers seeking a reliable, high-performance N-channel MOSFET that balances switching speed with ruggedness. For detailed technical resources and purchasing options, visit IC Manufacturer.
STPST10H100SFY Technical Specifications
Parameter
Value
Unit
Drain-Source Voltage (VDS)
100
V
Continuous Drain Current (ID) @ 25??C
10
A
On-Resistance (RDS(on)) @ VGS=10 V
9.5
m??
Gate Threshold Voltage (VGS(th))
2.0 ?C 4.0
V
Total Gate Charge (Qg)
33
nC
Drain-Source Diode Forward Voltage (VSD)
1.5
V
Maximum Power Dissipation (PD)
75
W
Junction Temperature (TJ)
-55 to 175
??C
STPST10H100SFY Key Features
Low On-Resistance: The 9.5 m?? RDS(on) minimizes conduction losses, improving overall system efficiency in power management applications.
High Avalanche Energy Capability: Offers superior ruggedness and reliability under inductive load switching, ensuring device longevity.
Fast Switching Performance: Optimized gate charge and switching characteristics reduce switching losses, enabling higher frequency operation with less heat dissipation.
Wide Operating Temperature Range: Supports junction temperatures up to 175??C, suitable for harsh industrial and automotive environments.
Typical Applications
DC-DC converters in industrial power supplies, where efficient switching and thermal management are critical for system reliability and compact design.
Automotive electronic systems requiring robust MOSFETs capable of handling transient voltage spikes and continuous high current loads.
Motor control circuits benefiting from low RDS(on) and fast switching to improve energy efficiency and dynamic response.
Power management modules in battery-operated equipment where low gate charge and low losses extend battery life and reduce heat.
STPST10H100SFY Advantages vs Typical Alternatives
This MOSFET provides a competitive edge through its balance of low on-resistance and high avalanche energy rating, making it more reliable than many conventional devices in demanding conditions. Its low gate charge facilitates efficient switching with lower power dissipation, resulting in cooler operation and improved system longevity. Compared to typical alternatives, it enables higher power density and better thermal performance, supporting advanced industrial and automotive electronics designs.
The STPST10H100SFY is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for its innovation in power MOSFET technology, providing devices optimized for high efficiency and ruggedness. This product reflects ST??s commitment to delivering reliable, high-performance components tailored for industrial, automotive, and power management applications.
FAQ
What is the maximum drain-to-source voltage rating
