STPSC40G12WLY Power MOSFET 40V 12A N-Channel TO-220 Package by STMicroelectronics

  • This device provides efficient power switching, improving system energy management and reducing heat generation.
  • STPSC40G12WLY features a low on-resistance, which enhances conduction efficiency and minimizes power loss during operation.
  • The compact CBZ package ensures board space savings, facilitating integration into designs with limited room.
  • Ideal for use in power supply circuits where reliable switching supports stable voltage regulation and system performance.
  • Built to meet industry standards for durability, ensuring consistent operation under varying environmental conditions.
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STPSC40G12WLY Overview

The STPSC40G12WLY is a high-performance silicon carbide (SiC) power module designed for efficient power conversion in industrial and automotive applications. Featuring a compact 1200 V blocking voltage and a 40 A current rating, it enhances system reliability and thermal management through optimized packaging. Its robust architecture supports higher switching frequencies and reduced losses, enabling engineers to design compact, energy-efficient power systems. Ideal for demanding environments, this module delivers superior performance, combining advanced semiconductor technology with practical integration benefits. For detailed specifications and purchasing options, visit IC Manufacturer.

STPSC40G12WLY Technical Specifications

Parameter Specification
Rated Voltage 1200 V
Rated Current 40 A
Technology Silicon Carbide (SiC) MOSFET
Package Type Power module with low inductance design
Operating Temperature Range -40??C to +150??C
Maximum Switching Frequency Up to 100 kHz (application dependent)
Thermal Resistance Junction-to-Case 0.25 ??C/W
Isolation Voltage 2500 V RMS

STPSC40G12WLY Key Features

  • High blocking voltage of 1200 V: Enables operation in demanding power conversion systems with elevated voltage requirements, ensuring robust performance under stress.
  • 40 A continuous current rating: Supports high power density designs, allowing for compact and efficient power modules in industrial environments.
  • Silicon Carbide MOSFET technology: Offers lower conduction and switching losses compared to silicon devices, improving overall system efficiency and thermal handling.
  • Low thermal resistance package: Enhances heat dissipation to maintain device reliability and prolong operational lifetime in high-power applications.

Typical Applications

  • Industrial motor drives requiring high efficiency and fast switching capabilities to reduce energy consumption and improve control accuracy.
  • Power factor correction circuits in renewable energy systems to ensure stable and efficient energy conversion.
  • Electric vehicle onboard chargers benefiting from compact design and enhanced thermal management for reliable operation.
  • Uninterruptible power supplies (UPS) and power converters where high voltage and current ratings are critical for maintaining system uptime and safety.

STPSC40G12WLY Advantages vs Typical Alternatives

The STPSC40G12WLY stands out from traditional silicon power modules due to its silicon carbide technology, which offers superior switching speeds and reduced conduction losses. This results in higher efficiency and lower thermal stress, enabling more compact cooling solutions. Its robust voltage and current ratings provide increased reliability in harsh industrial environments, making it a preferred choice for engineers seeking optimized power density and long-term durability compared to conventional alternatives.

STPSC40G12WLY Brand Info

The STPSC40G12WLY power module is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in advanced power electronics, delivering high-quality SiC devices tailored for industrial and automotive markets. This product aligns with ST??s commitment to innovation, energy efficiency, and reliability, supporting engineers worldwide in developing next-generation power systems with enhanced performance and integration ease.

FAQ

What type of semiconductor technology is used in this power module?

The device utilizes silicon carbide (SiC) MOSFET technology. SiC offers significant benefits over traditional silicon, including higher voltage blocking capability, faster switching speeds, and improved thermal performance, which contribute to overall system efficiency and reliability.

What are the maximum voltage and current ratings for this module?

This power module is rated for a maximum blocking voltage of 1200 V and a continuous current rating of 40 A. These ratings make it suitable for medium to high power applications in industrial and automotive sectors.

How does the package design affect the performance and reliability?

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