STPSC30G065WL STMicroelectronics Power MOSFET N-Channel 30V SO-8 Package

STPSC30G065WL Overview

The STPSC30G065WL is a high-performance silicon carbide (SiC) Schottky diode designed for power electronics applications requiring efficient switching and low conduction losses. Featuring a forward current rating of 30 A and a repetitive peak reverse voltage of 650 V, this device offers robust electrical characteristics suited for high-frequency operation. Its advanced SiC technology enables reduced switching losses and improved thermal performance, making it an ideal choice for applications demanding reliability and energy efficiency. The diode??s compact wafer-level chip scale package supports integration into space-constrained designs. Available through IC Manufacturer, it serves engineers and sourcing specialists seeking durable, high-speed rectification components.

STPSC30G065WL Technical Specifications

STPSC30G065WL Key Features

• High blocking voltage capability: Supports up to 650 V, enabling use in medium-voltage power systems.
• Low forward voltage drop: Minimizes conduction losses, improving overall system efficiency and thermal management.
• Fast switching performance: Schottky diode structure eliminates reverse recovery, reducing switching losses in high-frequency applications.
• Wide operating temperature range: Ensures reliable operation from -55 ??C up to +175 ??C, suitable for harsh industrial environments.
• Compact wafer-level chip scale packaging: Facilitates integration in space-constrained designs, lowering parasitic inductance.
• High surge current capability: Withstands short-term high current spikes, enhancing device robustness under transient conditions.

Typical Applications

• Power factor correction (PFC) circuits in industrial power supplies, where efficiency and high-voltage blocking are critical for meeting regulatory standards.
• DC?CDC converters for renewable energy systems, leveraging high switching speeds and thermal performance to maximize energy conversion efficiency.
• Electric vehicle onboard chargers, requiring reliable, compact, and high-current diodes to handle power conversion and regeneration functions.
• Motor drives and industrial inverters that demand rugged, low-loss diode components capable of operating under elevated temperature and switching frequency conditions.

STPSC30G065WL Advantages vs Typical Alternatives

This SiC Schottky diode offers significant advantages over traditional silicon diodes and standard silicon carbide devices. Its lower forward voltage drop results in reduced conduction losses, directly improving efficiency and thermal management. The virtually zero reverse recovery current enhances high-frequency switching performance, lowering electromagnetic interference and increasing system reliability. The wide temperature range and high surge current capability provide robustness in demanding industrial conditions, making it a superior choice for power conversion solutions requiring compactness, durability, and energy efficiency.

STPSC30G065WL Brand Info

The STPSC30G065WL is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power semiconductors, including wide bandgap SiC devices that address the needs of modern power electronics. Their SiC Schottky diodes combine innovative material technology with advanced packaging to deliver high efficiency, reliability, and performance. This product is part of ST??s expanding portfolio of SiC components designed to support the growing demands of electric mobility, renewable energy, and industrial automation markets.

FAQ

What is the maximum operating temperature range of this diode?

The diode operates reliably within a junction temperature range from -55 ??C to +175 ??C, making it suitable for applications exposed to harsh thermal environments and wide temperature variations.

How does the STPSC30G065WL improve efficiency in power conversion circuits?