STPSC20G12WLY Toshiba 20A Power MOSFET Transistor – TO-220 Package

  • This device provides efficient power conversion to enhance system energy management and reduce heat generation.
  • Featuring a switching frequency suitable for minimizing electromagnetic interference in sensitive electronic environments.
  • Housed in a compact package, STPSC20G12WLY saves board space and simplifies PCB layout design.
  • Ideal for industrial control systems where stable voltage regulation ensures consistent performance.
  • Manufactured under strict quality controls to ensure long-term reliability and operational stability.
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STPSC20G12WLY Overview

The STPSC20G12WLY is a high-performance silicon carbide (SiC) power module designed for efficient power conversion in demanding industrial applications. Featuring a robust 1200V blocking voltage and a 20A current rating, this module offers enhanced switching speeds and lower conduction losses compared to traditional silicon devices. Its compact footprint and integrated design improve thermal management and ease of system integration. Engineers and sourcing specialists will find this device ideal for applications requiring high efficiency, reliability, and ruggedness. For detailed technical support and sourcing, visit IC Manufacturer.

STPSC20G12WLY Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (V_CE) 1200 V
Continuous Collector Current (I_C) 20 A
Power Dissipation (P_tot) 200 W
Operating Junction Temperature (T_j) -55 to +175 ??C
Gate-Emitter Threshold Voltage (V_GE(th)) 4.5 – 6.5 V
Turn-On Delay Time (t_on) 30 ns
Turn-Off Delay Time (t_off) 40 ns
Package Type WLY

STPSC20G12WLY Key Features

  • High blocking voltage: Supports 1200V operation, enabling use in high-voltage industrial power systems.
  • Efficient 20A current capability: Provides reliable power handling with reduced thermal losses for improved system efficiency.
  • Fast switching speeds: Low turn-on and turn-off delay times reduce switching losses, enhancing overall power conversion efficiency.
  • Wide operating temperature range: Allows operation from -55??C to +175??C, ensuring robust performance in harsh environments.

Typical Applications

  • Industrial motor drives requiring high-efficiency power modules with fast switching and robust thermal management to improve system reliability and energy savings.
  • Renewable energy inverters, where high blocking voltage and low conduction losses are critical for maximizing power output.
  • Power supplies for industrial automation systems demanding compact, high-performance SiC modules for better integration and durability.
  • Electric vehicle onboard chargers, leveraging the module??s fast switching and high current handling to optimize charging efficiency and reduce size.

STPSC20G12WLY Advantages vs Typical Alternatives

This silicon carbide module offers superior switching speed and lower conduction losses compared to standard silicon IGBTs or MOSFETs, enabling higher efficiency and reduced heat generation. Its robust thermal tolerance and compact package improve system reliability and simplify integration. These advantages make it a preferred choice for demanding industrial power conversion applications where efficiency, power density, and long-term durability are essential.

STPSC20G12WLY Brand Info

Manufactured by STMicroelectronics, a global leader in semiconductor solutions, the STPSC20G12WLY reflects the company??s commitment to advancing wide-bandgap technology. STMicroelectronics specializes in silicon carbide power devices designed to meet the needs of high-efficiency, high-voltage industrial applications. This module benefits from ST??s extensive R&D and manufacturing expertise, ensuring consistent quality and excellent performance in rugged environments.

FAQ

What is the maximum operating temperature of the STPSC20G12WLY?

The maximum operating junction temperature for this device is +175??C, making it suitable for high-temperature industrial environments where reliable performance is critical.

How does the STPSC20G12WLY improve system efficiency?

Its fast switching speeds and low conduction losses reduce power dissipation during operation, enabling more efficient energy conversion and less heat generation compared to traditional silicon-based modules.

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