STPSC12065DY Overview
The STPSC12065DY is a high-performance dual N-channel power MOSFET designed for efficient switching in industrial and automotive applications. With a low on-resistance and fast switching capabilities, this device supports high current handling and reduced power losses, enabling enhanced system reliability and energy efficiency. Packaged in a compact, thermally optimized SO-8 form factor, it offers robust electrical and thermal performance, making it suitable for demanding environments. Engineers and sourcing specialists will find this component ideal for applications requiring optimized power management and compact integration. For more details, visit IC Manufacturer.
STPSC12065DY Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) @ 25??C | 90 A |
| On-Resistance (RDS(on)) | 1.65 m?? @ 10 V Gate |
| Gate Threshold Voltage (VGS(th)) | 1.0 – 2.5 V |
| Total Gate Charge (Qg) | 29 nC |
| Maximum Power Dissipation (PD) | 125 W |
| Operating Junction Temperature (TJ) | -55??C to +175??C |
| Package | SO-8 (Dual MOSFET) |
STPSC12065DY Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall efficiency and thermal performance in high-current circuits.
- High Current Capability: Supports continuous drain current up to 90 A, enabling reliable operation in demanding power switching environments.
- Fast Switching Speeds: Low total gate charge reduces switching losses, making it suitable for high-frequency applications.
- Wide Operating Temperature Range: Ensures stable performance under harsh industrial and automotive temperature conditions.
- Compact SO-8 Package: Facilitates easy PCB layout and thermal management for space-constrained designs.
Typical Applications
- DC-DC converters in automotive and industrial power supplies where high efficiency and thermal reliability are critical.
- Load switch applications requiring low on-resistance and fast switching to minimize power dissipation.
- Battery management systems that benefit from the device’s low gate charge and robust electrical characteristics.
- Motor control circuits demanding high current capability and reliable operation in harsh environments.
STPSC12065DY Advantages vs Typical Alternatives
This dual N-channel MOSFET offers superior efficiency due to its exceptionally low on-resistance and fast switching capability compared to standard MOSFETs. Its high current rating and robust thermal performance ensure reliable operation under heavy load and elevated temperatures. The compact SO-8 package supports easy integration and improved heat dissipation, giving it an edge in power density and system design flexibility. These advantages make it a preferred choice for engineers prioritizing power efficiency and reliability.
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STPSC12065DY Brand Info
The STPSC12065DY is manufactured by STMicroelectronics, a global leader in semiconductor solutions known for innovation in power management devices. STMicroelectronics specializes in high-quality MOSFETs designed to meet rigorous automotive and industrial standards. This product exemplifies ST??s commitment to delivering reliable, efficient, and compact power components optimized for demanding applications, backed by comprehensive technical support and extensive supply chain availability.
FAQ
What is the maximum drain-source voltage rating of the STPSC12065DY?
The device is rated for a maximum drain-source voltage of 60 V, making it suitable for a wide range of power switching applications within this voltage limit.
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What package type does this MOSFET come in?
This MOSFET is supplied in a SO-8 package, which provides a compact footprint and efficient thermal management for PCB integration.
How does the on-resistance affect the device performance?
Low on-resistance reduces conduction losses, improves efficiency, and lowers heat generation, enabling the device to handle higher currents with better thermal stability.
