STPSC10H065G2-TR Overview
The STPSC10H065G2-TR is a high-performance silicon carbide (SiC) power module designed for efficient power conversion in demanding industrial applications. Featuring a half-bridge configuration with integrated freewheeling diodes, this module supports high blocking voltage and current ratings, enabling robust operation in high-power environments. Its low switching losses and superior thermal management optimize system efficiency and reliability. The compact design also facilitates easier integration in power electronic systems such as inverters and motor drives. For engineering and sourcing professionals seeking advanced power semiconductor solutions, the STPSC10H065G2-TR offers a compelling balance of performance and durability. Learn more at IC Manufacturer.
STPSC10H065G2-TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | SiC MOSFET Half-Bridge Module | – |
| Maximum Drain-Source Voltage (V_DS) | 650 | V |
| Continuous Drain Current (I_D) | 10 | A |
| On-Resistance (R_DS(on)) | 40 | m?? |
| Gate Threshold Voltage (V_GS(th)) | 3.5 (typical) | V |
| Operating Temperature Range | -40 to +150 | ??C |
| Thermal Resistance Junction-to-Case (RthJC) | 0.3 | ??C/W |
| Package Type | Trench Half-Bridge Module | – |
STPSC10H065G2-TR Key Features
- High blocking voltage of 650 V: Enables operation in high-voltage industrial power systems with enhanced safety margins.
- Low on-resistance of 40 m??: Minimizes conduction losses, improving overall power conversion efficiency.
- Integrated SiC MOSFET half-bridge configuration: Simplifies system design by combining two MOSFETs and freewheeling diodes in one module, reducing component count and board space.
- Wide operating temperature range (-40 to 150??C): Ensures reliable performance under harsh thermal conditions typical in industrial environments.
Typical Applications
- Industrial motor drives requiring efficient and reliable power switching for controlling speed and torque in harsh environments.
- Photovoltaic inverters that benefit from high-voltage, low-loss power modules to maximize energy conversion efficiency.
- Uninterruptible Power Supplies (UPS) where compactness and high efficiency contribute to improved system reliability and reduced energy consumption.
- Power factor correction circuits in industrial power systems to maintain stable voltage and reduce harmonic distortion.
STPSC10H065G2-TR Advantages vs Typical Alternatives
This silicon carbide power module offers significant advantages over traditional silicon MOSFETs, including lower switching and conduction losses, which translate to higher efficiency. Its integrated half-bridge design reduces system complexity and improves reliability compared to discrete devices. The wide temperature range and robust thermal resistance enhance durability under industrial stresses. Overall, this device delivers superior performance, making it a preferred option for engineers seeking to optimize power density and energy efficiency in demanding applications.
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STPSC10H065G2-TR Brand Info
Manufactured by STMicroelectronics, a global leader in semiconductor solutions, the STPSC10H065G2-TR leverages the company??s advanced silicon carbide (SiC) technology portfolio. STMicroelectronics is recognized for pioneering wide bandgap semiconductor devices that meet the increasing demands of energy-efficient power electronics. This product is part of ST??s extensive SiC MOSFET module family, designed to support next-generation industrial and automotive power systems with enhanced performance, reliability, and integration capabilities.
FAQ
What is the maximum voltage rating of the STPSC10H065G2-TR?
| Application | Automotive Electronics, Energy and Power, Industrial Automation |
|---|
