STPSC10H065G-TR STMicroelectronics IGBT Transistor, 650V, 10A, TO-263 Package

STPSC10H065G-TR Overview

The STPSC10H065G-TR is a high-performance power MOSFET designed for efficient switching and power management in industrial and automotive applications. Featuring a low on-resistance and robust avalanche energy capability, it enables improved thermal management and higher reliability under demanding conditions. This device supports fast switching speeds with minimal losses, making it suitable for power conversion and motor control systems. Packaged in a compact and thermally efficient form, it simplifies integration into complex power management circuits. For detailed technical support and sourcing, visit IC Manufacturer.

STPSC10H065G-TR Technical Specifications

STPSC10H065G-TR Key Features

• Low On-Resistance: Minimizes conduction losses, enhancing energy efficiency and reducing heat generation during operation.
• High Voltage Rating: Supports up to 650 V, enabling use in high-voltage switching and power conversion systems.
• Robust Avalanche Energy Capability: Improves reliability by withstanding transient voltage spikes common in inductive load switching.
• Optimized Gate Charge: Facilitates fast switching speeds, reducing switching losses and improving overall system performance.

Typical Applications

• Industrial motor drives and automation controls requiring efficient power switching with high reliability and thermal performance.
• Switch mode power supplies (SMPS) where fast switching and low conduction losses are crucial for efficiency.
• Electric vehicle (EV) powertrain inverters and battery management systems demanding high voltage tolerance and ruggedness.
• Renewable energy converters such as solar inverters and wind turbine controllers that benefit from robust power MOSFETs.

STPSC10H065G-TR Advantages vs Typical Alternatives

This device offers a competitive edge with its combination of low on-resistance and high voltage capability, which together reduce power losses and increase system efficiency. Its strong avalanche energy resilience enhances durability under inductive loads, outperforming many standard MOSFETs in reliability. Additionally, the optimized gate charge supports faster switching, enabling more compact and efficient power designs. These factors combine to make it a superior choice for engineers seeking robust, energy-saving solutions.

STPSC10H065G-TR Brand Info

Manufactured by STMicroelectronics, a global leader in semiconductor solutions, this power MOSFET reflects the company??s commitment to innovation and quality. STMicroelectronics specializes in discrete and power devices designed for industrial, automotive, and consumer electronics applications. The STPSC10H065G-TR is part of their comprehensive MOSFET portfolio, known for reliability, efficiency, and ease of integration into demanding power electronic systems.

FAQ

What is the maximum drain-source voltage rating of this device?

The device can handle a maximum drain-source voltage of 650 V, making it suitable for high-voltage power switching applications where robust voltage tolerance is essential.

How does the low on-resistance benefit power efficiency?

Low on-resistance reduces conduction losses during current flow, which minimizes heat dissipation and improves overall energy efficiency in power conversion and motor control systems.

Can this MOSFET be used in automotive applications?

Yes