STPSC10H065DI STMicroelectronics IGBT Power Module, High Efficiency, 7-Pin Package

STPSC10H065DI Overview

The STPSC10H065DI is a high-performance silicon carbide (SiC) MOSFET designed for efficient power conversion in industrial and automotive applications. Offering a low on-resistance and fast switching capabilities, this device enhances system efficiency and reduces thermal losses in high-voltage circuits. Its robust construction supports operation at 650 V, making it suitable for demanding environments where reliability and power density are critical. Engineers and sourcing specialists can leverage its advanced electrical characteristics to optimize power management solutions. For detailed technical support and supply, visit IC Manufacturer.

STPSC10H065DI Technical Specifications

STPSC10H065DI Key Features

• 650 V Breakdown Voltage: Enables reliable operation in high-voltage power conversion systems, ensuring safety and stability under demanding conditions.
• Low On-Resistance (65 m??): Minimizes conduction losses, improving overall system efficiency and reducing heat generation.
• Wide Operating Temperature Range: Supports junction temperatures up to 175 ??C, enhancing reliability and suitability for harsh industrial environments.
• Fast Switching Speed: Reduces switching losses, allowing higher switching frequencies and improved power density in converters and inverters.

Typical Applications

• High-efficiency power supplies and converters in industrial automation systems, where high voltage and temperature tolerance are required for continuous operation.
• Electric vehicle (EV) onboard chargers and traction inverters, leveraging the low losses and fast switching for improved battery charging and motor control.
• Renewable energy systems such as photovoltaic inverters, benefiting from the device??s high voltage rating and thermal robustness.
• Uninterruptible power supplies (UPS) and motor drives, where efficiency and reliability at elevated temperatures are critical to system uptime.

STPSC10H065DI Advantages vs Typical Alternatives

This SiC MOSFET stands out against conventional silicon devices due to its lower on-resistance and higher voltage capability, which translate into improved energy efficiency and reduced thermal stress. The device??s fast switching reduces power losses, enabling more compact and reliable power systems. Its wide temperature range and robust package ensure superior long-term reliability, making it an optimal choice for high-power industrial and automotive applications compared to standard silicon MOSFETs.

STPSC10H065DI Brand Info

The STPSC10H065DI is a product from STMicroelectronics, a global leader in semiconductor technology. STMicroelectronics specializes in innovative power devices, including silicon carbide MOSFETs designed to meet the demands of modern industrial, automotive, and energy applications. This device reflects ST??s commitment to advancing power electronics with high-quality, efficient, and reliable components tailored for next-generation power conversion and management systems.

FAQ

What is the maximum voltage rating for the STPSC10H065DI?

The device is rated for a maximum drain-source voltage of 650 V, enabling it to be used safely in high-voltage power conversion circuits commonly found in industrial and automotive applications.

How does the low on-resistance benefit system performance?

Lower on-resistance reduces conduction losses, which decreases heat generation and improves overall efficiency. This means power systems can operate cooler and more reliably, extending the lifetime of both the device and the system.

What package type does the STPSC10H065

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