STPS3170UF STMicroelectronics 31A Schottky Diode in TO-220 Package

  • Provides efficient rectification for power conversion, enhancing overall circuit performance and reducing energy loss.
  • Features a low forward voltage drop, improving efficiency by minimizing heat generation during operation.
  • Encased in a compact package, it saves valuable board space for dense electronic designs.
  • Ideal for use in power supplies where stable, reliable diode performance ensures consistent device operation.
  • Constructed to withstand thermal and electrical stress, supporting long-term reliability in demanding conditions.
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STPS3170UF Overview

The STPS3170UF is a high-performance ultrafast dual Schottky diode designed for efficient power conversion in industrial and consumer electronics. Featuring a low forward voltage drop and fast recovery time, it offers reduced power losses and enhanced thermal performance. This device is suitable for high-frequency switching applications, ensuring reliable operation under demanding conditions. Its robust construction and compact package enable easy integration into power management circuits, improving overall system efficiency. For sourcing and detailed technical information, visit IC Manufacturer.

STPS3170UF Technical Specifications

ParameterValueUnit
Maximum Repetitive Peak Reverse Voltage (VRRM)170V
Average Forward Current (IF(AV))3A
Surge Non-Repetitive Forward Current (IFSM)70A
Forward Voltage Drop (VF) @ IF = 3A0.55V
Reverse Recovery Time (trr)25ns
Operating Junction Temperature (Tj)-65 to +150??C
Thermal Resistance Junction to Ambient (RthJA)62??C/W
Package TypeDFN 7×4 mm

STPS3170UF Key Features

  • Low Forward Voltage Drop: Minimizes conduction losses, improving overall power efficiency in switching power supplies.
  • Ultrafast Recovery Time: Enables high-frequency operation by reducing switching losses and electromagnetic interference.
  • High Surge Current Capability: Provides robustness against transient overloads, enhancing reliability in industrial environments.
  • Compact DFN Package: Facilitates easy PCB layout and thermal management for space-constrained applications.

Typical Applications

  • Switching power supplies and converters requiring efficient rectification at high switching frequencies with minimal losses.
  • Power factor correction circuits where fast recovery diodes improve system reliability and reduce harmonic distortion.
  • Solar inverters and battery charging systems that demand robust and efficient diode operation under varying load conditions.
  • Motor drives and industrial automation equipment benefiting from high surge current tolerance and thermal stability.

STPS3170UF Advantages vs Typical Alternatives

This ultrafast Schottky diode offers a significantly lower forward voltage drop and faster recovery time compared to standard rectifier diodes, resulting in higher efficiency and reduced heat generation. Its compact DFN package enhances thermal dissipation and allows for better PCB integration. The device??s high surge current rating ensures superior reliability in demanding industrial applications, making it a more robust choice than typical alternatives.

STPS3170UF Brand Info

The STPS3170UF is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power management components, delivering innovative and reliable devices for industrial and consumer electronics. This diode series reflects ST??s commitment to high efficiency and quality, supporting designers in optimizing power conversion and enhancing system performance.

FAQ

What is the maximum reverse voltage rating of the STPS3170UF?

The device is rated for a maximum repetitive peak reverse voltage of 170 V, making it suitable for a wide range of power conversion applications where high voltage blocking capability is essential.

How does the forward voltage drop impact efficiency?

A low forward voltage drop reduces conduction losses within the diode, which directly improves overall system efficiency by minimizing wasted energy and heat generation during operation.

What is the significance of the ultrafast recovery time?

The ultrafast recovery time of 25 nanoseconds allows the diode to switch off quickly during high-frequency operation, reducing switching losses and electromagnetic interference for more stable and efficient circuits.

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