STP80NF55-06 Overview
The STP80NF55-06 is a high-performance N-channel MOSFET designed for efficient power switching in industrial and consumer electronics. This device features a low on-resistance, enabling improved conduction efficiency and reduced power loss in high-current applications. With a robust maximum drain-source voltage rating and fast switching capabilities, it supports reliable operation in demanding environments. The STP80NF55-06 offers a balance of ruggedness and efficiency, making it suitable for power management, motor control, and DC-DC converter circuits. For detailed sourcing and specifications, visit IC Manufacturer.
STP80NF55-06 Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) | 80 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 V |
| Drain-Source On-Resistance (RDS(on)) | 6.0 m?? @ VGS = 10 V |
| Total Gate Charge (Qg) | 59 nC |
| Power Dissipation (PD) | 200 W |
| Package | TO-220 |
STP80NF55-06 Key Features
- Low On-Resistance: Minimizes conduction losses for enhanced energy efficiency and thermal management in high-current switching circuits.
- High Continuous Current Rating: Supports up to 80 A drain current, enabling robust performance in power-intensive applications.
- Fast Switching Speed: Reduces switching losses, improving overall system efficiency in PWM and motor control designs.
- Rugged TO-220 Package: Provides effective heat dissipation and mechanical stability for industrial environments.
Typical Applications
- Power conversion systems such as DC-DC converters and power supplies where efficient switching and low losses are critical for performance and reliability.
- Motor drive circuits requiring high current capability and fast switching to optimize control and reduce heat generation.
- Battery management and protection circuits in automotive or renewable energy systems, leveraging the device??s robustness and low RDS(on).
- Load switching and power distribution modules in industrial automation where durability and thermal stability are essential.
STP80NF55-06 Advantages vs Typical Alternatives
This MOSFET provides a compelling advantage with its low on-resistance and high continuous current rating, delivering efficient power handling with minimal conduction losses. Compared to typical alternatives, it offers superior switching speed, enhancing energy efficiency in PWM applications. The rugged TO-220 package ensures reliable thermal management and mechanical integrity, making it a dependable choice for demanding industrial environments.
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STP80NF55-06 Brand Info
The STP80NF55-06 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for innovation and quality, STMicroelectronics specializes in power MOSFETs designed to meet the needs of industrial, automotive, and consumer electronics sectors. This particular device embodies ST??s commitment to energy efficiency, reliability, and performance, supporting a wide range of power management applications worldwide.
FAQ
What is the maximum voltage rating of this MOSFET?
The maximum drain-source voltage rating for this MOSFET is 55 volts, making it suitable for medium-voltage power switching applications within this limit.
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How does the on-resistance affect device performance?
Lower on-resistance reduces conduction losses, which improves efficiency and decreases heat generation, allowing the MOSFET to handle higher currents more effectively and enhancing overall system reliability.
What package type is used for this MOSFET and why is it important?
This device comes in a TO-220 package, which
