STP7NK80ZFP STMicroelectronics 800V N-Channel MOSFET, TO-220FP Package

  • This device switches electrical power efficiently, enhancing overall system energy management and control.
  • It features a low on-resistance, reducing heat generation and improving performance under load.
  • The compact package design minimizes board space, facilitating integration in dense electronic assemblies.
  • Ideal for power supply circuits, it helps maintain stable voltage and current for sensitive components.
  • Manufactured with quality assurance processes to ensure consistent operation and long-term reliability.
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STP7NK80ZFP Overview

The STP7NK80ZFP is a robust N-channel MOSFET designed for high-voltage switching applications, offering a drain-source voltage (VDS) rating of 800 V. Optimized for efficient power management in industrial and consumer electronics, this device delivers low on-resistance and fast switching capabilities. Its compact footprint and reliable performance make it a preferred choice for engineers seeking effective energy control and thermal management. Manufactured with advanced semiconductor processes, the STP7NK80ZFP balances power efficiency and durability, ensuring optimal operation in demanding environments. For more detailed information, visit IC Manufacturer.

STP7NK80ZFP Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)800V
Continuous Drain Current (ID) @ 25??C7A
Gate Threshold Voltage (VGS(th))3.0 – 5.0V
Maximum Gate-Source Voltage (VGS)??20V
Drain-Source On-Resistance (RDS(on)) @ VGS=10 V0.75??
Total Gate Charge (Qg)36nC
Power Dissipation (PD)75W
Operating Junction Temperature Range-55 to 150??C

STP7NK80ZFP Key Features

  • High Voltage Capability: Rated for 800 V drain-source voltage, enabling reliable operation in high-voltage circuits.
  • Low On-Resistance: With an RDS(on) of 0.75 ?? at 10 V gate drive, it minimizes conduction losses, improving efficiency in power switching.
  • Robust Gate Control: ??20 V maximum gate-source voltage rating ensures compatibility with various driving voltages for flexible design integration.
  • Fast Switching Performance: Total gate charge of 36 nC supports rapid switching, enhancing overall system responsiveness and reducing heat generation.

Typical Applications

  • Switch mode power supplies (SMPS) where efficient high-voltage switching is critical to achieve energy savings and thermal management.
  • Motor control circuits requiring precise, reliable high-voltage MOSFET switches to manage power delivery and performance.
  • Industrial automation systems that depend on robust, durable transistors for switching high-voltage loads under varying conditions.
  • Lighting ballasts and inverter circuits, leveraging the device??s fast switching and high voltage rating for optimized power conversion.

STP7NK80ZFP Advantages vs Typical Alternatives

The STP7NK80ZFP offers a distinct advantage with its high 800 V voltage rating combined with a low on-resistance, delivering improved efficiency over typical alternatives. Its robust gate voltage tolerance and thermal handling capabilities support reliable operation in demanding industrial settings. These features reduce power loss and thermal stress, enabling longer device life and stable performance compared to standard MOSFETs in similar applications.

STP7NK80ZFP Brand Info

The STP7NK80ZFP is a product from STMicroelectronics, a global leader in semiconductor manufacturing. Renowned for innovation in power electronics, STMicroelectronics provides this MOSFET as part of its portfolio aimed at power management solutions. The device reflects ST??s commitment to delivering reliable, high-performance components tailored for industrial and consumer applications. ST??s extensive quality control and global support network ensure consistent supply and technical assistance for seamless integration.

FAQ

What is the maximum drain-source voltage rating of this MOSFET?

The device is rated for a maximum drain-source voltage of 800 V, making it suitable for applications requiring high-voltage switching capabilities and robust performance under stress.

How does the on-resistance affect the efficiency of the STP7NK

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