STP75NF75 N-Channel MOSFET 75V 75A Power Transistor in TO-220 Package by STMicroelectronics

  • Functions as a high-speed MOSFET for efficient switching in power electronics applications.
  • Features a low on-resistance to reduce conduction losses and improve overall energy efficiency.
  • Comes in a compact package that saves board space and simplifies thermal management.
  • Suitable for motor control circuits where fast switching enhances performance and responsiveness.
  • Designed for durability with robust construction to ensure consistent operation under stress.
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STP75NF75 Overview

The STP75NF75 is a high-performance N-channel MOSFET designed for efficient power switching and amplification in industrial and consumer electronics. Featuring a robust 75V drain-source voltage rating and low on-resistance, it delivers high current capability and fast switching speeds. This device is optimized for power management applications, offering excellent thermal stability and reliability. Ideal for engineers and sourcing specialists seeking a durable, efficient transistor, it enables enhanced system efficiency and compact design. For more detailed information, visit IC Manufacturer.

STP75NF75 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)75V
Continuous Drain Current (ID)80A
Gate Threshold Voltage (VGS(th))2 – 4V
Static Drain-Source On-Resistance (RDS(on))0.009??
Gate Charge (Qg)55nC
Total Gate Charge (Qg)55nC
Power Dissipation (PD)300W
Operating Junction Temperature (TJ)-55 to 175??C

STP75NF75 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving efficiency in power switching applications.
  • High Current Handling: Supports continuous drain currents up to 80A, enabling robust performance in demanding circuits.
  • Fast Switching Speeds: Enables efficient operation in high-frequency applications, reducing switching losses.
  • Wide Operating Temperature Range: Ensures reliable performance in harsh industrial environments.

Typical Applications

  • Power management in DC-DC converters and switching regulators requiring efficient high-current MOSFETs.
  • Motor control circuits benefiting from fast switching and high current capacity.
  • Load switching and power distribution in industrial automation systems.
  • Battery management systems and renewable energy inverters demanding robust semiconductor devices.

STP75NF75 Advantages vs Typical Alternatives

This MOSFET offers a superior combination of low on-resistance and high current capacity, reducing power losses compared to typical devices. Its fast switching characteristics enhance system efficiency and thermal management. The wide temperature range and robust voltage rating improve reliability in industrial applications, making it a preferred choice over standard transistors for power control and switching tasks.

STP75NF75 Brand Info

The STP75NF75 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for innovative power transistors and MOSFETs, STMicroelectronics provides devices optimized for efficiency, reliability, and integration in industrial and consumer electronics. This MOSFET is part of their comprehensive portfolio aimed at power management and motor control applications, backed by extensive technical support and quality assurance.

FAQ

What is the maximum drain-source voltage rating for this MOSFET?

The maximum drain-source voltage (VDS) rating is 75 volts, which means the device can safely handle voltages up to this limit without breakdown, making it suitable for medium voltage power switching applications.

How does the low on-resistance benefit circuit performance?

Low on-resistance reduces conduction losses during operation, which leads to less heat generation and higher energy efficiency. This allows for improved thermal management and can contribute to longer device and system lifespan.

What kind of current can this transistor continuously handle?

This MOSFET supports a continuous drain current up to 80 amperes, enabling it to manage high load currents effectively in power control and switching circuits.

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Is this device suitable for high-frequency switching applications?

Yes, the device features fast switching times and a total gate charge of approximately 55 nC, making it well-suited for high-frequency power switching where

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