STP5NK80Z Overview
The STP5NK80Z is a high-performance N-channel MOSFET designed for switching and power management applications. It offers a drain-source voltage rating suitable for demanding industrial environments, ensuring reliable operation in high-voltage circuits. With low on-resistance and rapid switching capabilities, this device supports efficient power conversion and thermal management. Its compact TO-220 package facilitates easy integration into various power electronic systems, making it ideal for engineers and sourcing specialists aiming for robust and efficient semiconductor solutions. For more details, visit IC Manufacturer.
STP5NK80Z Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID) | 5 A |
| On-Resistance (RDS(on)) | 0.48 ?? @ VGS=10 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Total Gate Charge (Qg) | 24 nC |
| Power Dissipation (PD) | 50 W |
| Operating Junction Temperature (TJ) | -55 to +150 ??C |
| Package Type | TO-220 |
STP5NK80Z Key Features
- High Voltage Capability: With an 800 V drain-source rating, it enables reliable operation in high-voltage industrial and power supply circuits.
- Low On-Resistance: Ensures minimized conduction losses, contributing to improved energy efficiency and reduced heat generation.
- Fast Switching Speed: Supports efficient switching performance, making it suitable for high-frequency power conversion applications.
- Robust Thermal Performance: Power dissipation rating up to 50 W allows the device to withstand demanding thermal conditions without compromising reliability.
Typical Applications
- Power supply circuits and DC-DC converters requiring efficient high-voltage MOSFETs for switching and power regulation.
- Motor control systems where reliable switching and thermal management are critical for performance and longevity.
- Industrial automation equipment benefiting from robust and efficient power semiconductor components.
- Lighting ballast circuits that demand high voltage tolerance and low power losses for energy efficiency.
STP5NK80Z Advantages vs Typical Alternatives
This MOSFET offers a strong balance of high voltage capability and low on-resistance, which typically results in better efficiency compared to alternatives with higher conduction losses. Its TO-220 package facilitates heat dissipation, enhancing reliability in power electronics. The combination of fast switching and robust thermal performance makes it an advantageous choice for engineers prioritizing sensitivity, accuracy, power efficiency, and durability in high-voltage applications.
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STP5NK80Z Brand Info
The STP5NK80Z is manufactured by STMicroelectronics, a leading global semiconductor company known for delivering innovative power management and discrete semiconductor solutions. STMicroelectronics specializes in providing high-quality MOSFETs tailored for industrial, automotive, and consumer electronics sectors. The STP5NK80Z reflects the brand??s commitment to reliability and performance in power switching devices, making it a trusted component for engineers designing efficient and robust power systems.
FAQ
What is the maximum voltage rating of the STP5NK80Z?
The device supports a maximum drain-source voltage of 800 V, making it suitable for high-voltage applications in industrial and power management systems.
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How does the on-resistance affect the efficiency of the MOSFET?
Lower on-resistance reduces conduction losses during operation, which improves overall efficiency and helps in minimizing heat generation, thus enhancing system reliability.
What package type does the STP5NK80Z come in, and why is it important?
It is housed in a TO-220
