STP55NF06 Overview
The STP55NF06 is a robust N-channel MOSFET designed for efficient power switching applications. Featuring a low on-resistance and high current handling capability, this transistor is ideal for industrial, automotive, and consumer electronics where high efficiency and thermal performance are critical. With a maximum drain-source voltage of 60V and continuous drain current up to 55A, it supports demanding load conditions while minimizing conduction losses. Its fast switching speeds and rugged construction ensure reliable operation in harsh environments. For sourcing and technical details, visit IC Manufacturer.
STP55NF06 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V |
| Continuous Drain Current (ID) at 25??C | 55 | A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 | V |
| On-Resistance (RDS(on)) at VGS=10V | 0.018 | ?? |
| Power Dissipation (PD) | 75 | W |
| Total Gate Charge (Qg) | 67 | nC |
| Gate-Source Voltage (VGS) | ??20 | V |
| Operating Temperature Range | -55 to +175 | ??C |
STP55NF06 Key Features
- Low On-Resistance: Minimizes conduction losses, enhancing energy efficiency in power conversion circuits.
- High Current Capability: Supports continuous drain currents up to 55A, suitable for high load applications.
- Fast Switching Performance: Enables efficient operation in PWM and switching power supplies, improving system responsiveness.
- Wide Operating Temperature Range: Reliable performance from -55??C to 175??C supports harsh industrial environments.
Typical Applications
- DC-DC converters and power management modules benefit from the transistor??s low conduction losses and fast switching.
- Motor control circuits leverage its high current handling to efficiently drive inductive loads.
- Automotive electronic systems use this device for load switching and power regulation under demanding conditions.
- General-purpose switching applications in industrial automation and consumer electronics where reliability and efficiency matter.
STP55NF06 Advantages vs Typical Alternatives
This MOSFET offers a competitive advantage through its exceptionally low on-resistance combined with high current capacity, reducing power dissipation and thermal stress compared to typical alternatives. Its robust voltage rating and fast switching reduce switching losses and improve system efficiency. The wide temperature range enhances reliability in industrial and automotive sectors, making it a preferred choice for engineers seeking durable, high-performance power transistors.
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STP55NF06 Brand Info
The STP55NF06 is a product from STMicroelectronics, a global leader in semiconductor solutions. Known for innovation and quality, STMicroelectronics specializes in power management and discrete devices optimized for industrial and automotive applications. This MOSFET reflects the brand??s commitment to delivering components that combine efficiency, reliability, and ease of integration, supported by extensive application notes and worldwide technical support.
FAQ
What is the maximum voltage rating of the STP55NF06?
The device can withstand a maximum drain-source voltage of 60 volts, making it suitable for many medium-power switching applications where voltage spikes or transient conditions may occur.
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How does the low on-resistance benefit circuit performance?
Low on-resistance reduces the voltage drop across the MOSFET during conduction, which lowers power losses and heat generation. This leads to higher efficiency and allows for smaller heat sinks or cooling solutions.
Can this MOSFET operate in high-temperature environments?
Yes, the transistor supports an operating temperature range from -55??C up to 175??C, enabling reliable use in automotive, industrial, and other harsh environment applications.
