STP4N150 N-Channel MOSFET Transistor, 150V, TO-220 Package by STMicroelectronics

STP4N150 Overview

The STP4N150 is a high-voltage, N-channel power MOSFET designed for efficient switching and power management in industrial systems. It features a drain-to-source voltage rating of 150 V, making it suitable for applications requiring robust voltage handling. With a low on-resistance and reliable switching characteristics, this device ensures optimized performance and thermal stability. Its compact packaging supports easy integration into power circuits, enhancing overall system efficiency. The STP4N150 is ideal for engineers and sourcing specialists seeking a durable and efficient MOSFET solution for high-voltage switching tasks. For detailed specifications and sourcing, visit IC Manufacturer.

STP4N150 Technical Specifications

STP4N150 Key Features

• High voltage rating: Supports up to 150 V drain-to-source voltage, enabling use in demanding industrial and power switching applications.
• Low on-resistance: Minimizes conduction losses, improving efficiency and reducing heat dissipation during operation.
• Robust thermal performance: Rated for operation up to 150??C junction temperature, ensuring reliable function in harsh environments.
• Fast switching capability: Low gate charge facilitates quick transitions, optimizing switching speed and reducing energy loss.

Typical Applications

• Power management circuits in industrial automation systems where high voltage switching is required for controlling motors and actuators.
• Switch mode power supplies (SMPS) for efficient energy conversion and voltage regulation in industrial equipment.
• Load switching and relay replacement in high-voltage DC circuits, providing reliable and compact solutions.
• Battery-powered systems and power inverters requiring effective switching devices to optimize performance and extend battery life.

STP4N150 Advantages vs Typical Alternatives

This MOSFET offers a superior combination of high voltage tolerance and low on-resistance, providing enhanced efficiency compared to standard devices. Its thermal robustness and fast switching characteristics reduce power loss and improve system reliability. Compared to typical alternatives, it enables engineers to design more compact, energy-efficient power systems with improved accuracy and longevity under demanding industrial conditions.

STP4N150 Brand Info

The STP4N150 is manufactured by STMicroelectronics, a globally recognized leader in semiconductor technology. STMicroelectronics specializes in power MOSFETs and discrete components known for their reliability, performance, and innovative design. This product line is widely used in industrial and automotive sectors, where high voltage and power efficiency are critical. The STP4N150 benefits from STMicroelectronics?? rigorous quality standards and extensive application support.

FAQ

What is the maximum drain-source voltage rating of the STP4N150?

The maximum drain-to-source voltage (V_DS) rating of this device is 150 V. This allows it to handle moderately high voltage loads typical in power switching and control applications without risk of breakdown.