STP30N65M5 N-Channel MOSFET 650V 30A TO-220 Package by STMicroelectronics

  • Functions as a high-voltage N-channel MOSFET, enabling efficient switching in electronic circuits.
  • Features a voltage rating suitable for demanding applications, ensuring stable performance under load.
  • Its TO-220 package offers a compact footprint, facilitating easier integration on crowded circuit boards.
  • Ideal for power management in motor control systems, enhancing energy efficiency and response time.
  • Manufactured with quality controls that promote durability and consistent operation over time.
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STP30N65M5 Overview

The STP30N65M5 is a high-voltage N-channel MOSFET designed to deliver robust switching performance in industrial and power electronics applications. With a drain-source voltage rating of 650 V and a continuous drain current of 30 A, it supports efficient power handling in demanding environments. Its low on-resistance ensures minimal conduction losses, enhancing overall system efficiency. The device’s fast switching speed and rugged design make it suitable for use in power supplies, motor control, and energy conversion systems. For more detailed product and sourcing information, visit IC Manufacturer.

STP30N65M5 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)650V
Continuous Drain Current (ID) at 25??C30A
Gate Threshold Voltage (VGS(th))2 – 4V
Maximum Gate-Source Voltage (VGS)??20V
Drain-Source On-Resistance (RDS(on)) at VGS=10V0.077??
Total Gate Charge (Qg)41nC
Power Dissipation (PD)150W
Operating Junction Temperature (Tj)-55 to 175??C

STP30N65M5 Key Features

  • High Voltage Capability: Supports up to 650 V drain-source voltage, enabling use in high-voltage power conversion and switching applications.
  • Low On-Resistance: With an RDS(on) of just 0.077 ?? at 10 V gate drive, it reduces conduction losses, enhancing overall system efficiency and thermal performance.
  • Robust Thermal Performance: Rated for junction temperatures up to 175??C, suitable for harsh industrial environments requiring reliable operation over wide temperature ranges.
  • Fast Switching Speed: Optimized gate charge characteristics ensure rapid switching, which is critical for high-frequency applications such as SMPS and motor drives.

Typical Applications

  • Switching power supplies and DC-DC converters, where high voltage blocking and efficient conduction are essential for reliable energy conversion.
  • Industrial motor control circuits requiring robust switching devices capable of handling high currents and voltages with low losses.
  • Uninterruptible power supplies (UPS) and battery management systems that demand high reliability and efficient power switching.
  • Lighting ballasts and inverters where ruggedness and thermal stability contribute to long-term operational stability.

STP30N65M5 Advantages vs Typical Alternatives

This MOSFET stands out with its combination of high voltage rating and low on-resistance, providing improved efficiency and reduced thermal dissipation compared to typical alternatives. Its robust maximum junction temperature and fast switching capabilities make it highly reliable and suitable for demanding industrial power applications. These factors contribute to enhanced system integration and lower overall power losses.

STP30N65M5 Brand Info

The STP30N65M5 is a product of STMicroelectronics, a global leader in semiconductor manufacturing known for its extensive portfolio of power MOSFETs. STMicroelectronics focuses on delivering high-performance components optimized for power management and industrial applications. This MOSFET series reflects the company??s commitment to innovation, quality, and reliability in power electronics solutions.

FAQ

What is the maximum voltage rating for the STP30N65M5?

The maximum drain-to-source voltage rating is 650 V, allowing the device to operate safely in high-voltage switching environments without breakdown.

How does the on-resistance affect performance in power applications?

A low on-resistance of 0.077 ?? at 10 V gate drive reduces conduction losses, which improves power efficiency and reduces heat generation in

Application

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