STP18N60M2 N-Channel MOSFET 60V 18A TO-220 Package by STMicroelectronics

  • This MOSFET efficiently switches electrical loads, enabling effective power control in circuits.
  • The device features a high voltage rating that supports robust performance under demanding conditions.
  • Its compact package reduces board space, facilitating integration into size-constrained designs.
  • Ideal for use in power management applications, it helps improve energy efficiency and thermal handling.
  • Manufactured to meet standard quality protocols, ensuring consistent reliability in various environments.
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STP18N60M2 Overview

The STP18N60M2 is a high-voltage N-channel MOSFET optimized for power switching applications. With a drain-source voltage rating of 600 V and a continuous drain current of 18 A, it offers robust performance in industrial and consumer electronics environments. Designed for efficient power management, this MOSFET features low on-resistance and fast switching speed, which help reduce energy loss and thermal dissipation. Its rugged construction ensures reliable operation under demanding conditions, making it a preferred choice for engineers and sourcing specialists seeking durable, high-performance semiconductor components. For further details, visit IC Manufacturer.

STP18N60M2 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Continuous Drain Current (ID) at 25??C18A
Gate Threshold Voltage (VGS(th))2 ?C 4V
Drain-Source On-Resistance (RDS(on))0.21??
Maximum Gate-Source Voltage (VGS)??20V
Total Gate Charge (Qg)38nC
Power Dissipation (PD)150W
Operating Junction Temperature (TJ)-55 to 150??C

STP18N60M2 Key Features

  • High Voltage Handling: Supports up to 600 V drain-source voltage, enabling use in high-voltage power conversion circuits.
  • Low On-Resistance: Ensures minimal conduction losses, improving overall system efficiency and reducing thermal stress.
  • Robust Thermal Performance: Rated for 150 W power dissipation, facilitating reliable operation in high-power environments.
  • Fast Switching Capability: Low total gate charge allows for efficient switching, beneficial in PWM and high-frequency applications.
  • Wide Operating Temperature Range: Functions effectively from -55??C to 150??C, suitable for varied industrial conditions.

Typical Applications

  • Industrial motor drives where efficient high-voltage switching is critical for performance and energy savings.
  • Switch-mode power supplies requiring low conduction losses and high-voltage tolerance for reliable energy conversion.
  • Lighting ballasts that benefit from robust MOSFETs capable of handling inductive loads and high voltages.
  • General-purpose power switching circuits in consumer electronics and automotive systems demanding durability and efficiency.

STP18N60M2 Advantages vs Typical Alternatives

This MOSFET stands out due to its balance of high voltage rating and low on-resistance, providing superior power efficiency and reduced thermal management requirements compared to typical alternatives. The fast switching speed and wide operating temperature range enhance system reliability and versatility in demanding industrial and electronic applications. Its robust design optimizes integration while maintaining long-term durability.

STP18N60M2 Brand Info

The STP18N60M2 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for delivering high-quality power MOSFETs tailored for industrial and consumer electronics. This device is part of ST??s portfolio of robust, high-voltage components designed to meet stringent performance and reliability standards, supporting engineers with efficient power management solutions.

FAQ

What is the maximum voltage this MOSFET can handle?

This device can handle a maximum drain-source voltage of 600 V, which makes it suitable for high-voltage applications such as power supplies

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