STP180N4F6 Overview
The STP180N4F6 is a high-performance N-channel MOSFET designed for power switching and amplification in industrial and automotive applications. Featuring a low on-resistance and high current handling capability, this device supports efficient energy management and thermal performance. Its robust design ensures reliability under demanding operating conditions, making it ideal for applications requiring fast switching and reduced power loss. Available in a compact package, it simplifies PCB layout and integration. For detailed technical support and procurement, visit IC Manufacturer.
STP180N4F6 Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at 25??C | 180 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 to 3.0 V |
| RDS(on) at VGS=10 V | 1.8 m?? |
| Power Dissipation (PD) | 300 W |
| Maximum Gate Voltage (VGS) | ??20 V |
| Operating Temperature Range | -55??C to +175??C |
| Package | TO-220 |
STP180N4F6 Key Features
- Low On-Resistance: Minimizes conduction losses, improving efficiency in power circuits.
- High Current Capability: Supports continuous current up to 180 A, suitable for demanding loads.
- Robust Thermal Performance: Withstands high junction temperatures up to 175??C, enhancing reliability in harsh environments.
- Fast Switching Speed: Enables efficient operation in switching power supplies and motor control.
Typical Applications
- High-power motor drives, where efficient current control and thermal stability are critical for performance and longevity.
- DC-DC converters requiring fast switching and low conduction losses for improved power efficiency.
- Automotive electronic systems, providing reliable power switching under varying temperature conditions.
- Power management modules in industrial equipment demanding high current handling and rugged design.
STP180N4F6 Advantages vs Typical Alternatives
This MOSFET stands out with its combination of low RDS(on) and high continuous current rating, providing enhanced power efficiency and thermal robustness compared to standard devices. Its ability to operate at elevated temperatures and handle heavy loads makes it a reliable choice for industrial and automotive power applications, reducing system losses and improving overall durability.
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STP180N4F6 Brand Info
The STP180N4F6 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for their innovative power management technologies, STMicroelectronics offers this MOSFET as part of their robust portfolio tailored for high-current and high-efficiency applications. This device benefits from ST??s advanced silicon process and quality standards, ensuring consistent performance and long-term reliability in demanding industrial environments.
FAQ
What is the maximum voltage rating for this MOSFET?
The device supports a maximum drain-source voltage (VDS) of 40 V, making it suitable for medium-voltage power switching applications commonly found in automotive and industrial systems.
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How does the low on-resistance benefit system design?
Low RDS(on) reduces conduction losses during operation, which improves overall efficiency and lowers heat generation. This allows for smaller heat sinks, reduced system size, and enhanced energy savings.
Can this MOSFET handle high temperature environments?
Yes, the device is rated for operation up to 175??C junction temperature, which ensures reliable performance in harsh conditions such as automotive under-hood or industrial power electronics.
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What package type is used for this component?
This MOSFET is supplied in a TO-220 package, offering easy mounting and effective heat dissipation for high-power applications.






