STP130N6F7 MOSFET N-Channel 130V 7.5A TO-252 Package by STMicroelectronics

  • This MOSFET efficiently switches electrical loads, improving overall circuit performance and energy management.
  • The device features a low on-resistance, reducing power loss and heat generation during operation.
  • Its compact package type enables board-space savings, making it suitable for designs with limited space.
  • Ideal for power management in automotive or industrial systems, enhancing control and reliability under varying conditions.
  • Manufactured under stringent quality standards to ensure consistent performance and long-term durability in demanding environments.
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STP130N6F7 Overview

The STP130N6F7 is a high-performance N-channel MOSFET designed for efficient power switching applications. Featuring a low on-resistance and fast switching capabilities, it ensures minimal conduction losses and improved thermal performance. This transistor is suitable for industrial and consumer electronics where robust, reliable switching is critical. Its optimized architecture supports high current loads and voltage levels up to 60V, making it ideal for power management and motor control circuits. For detailed technical support and sourcing options, visit IC Manufacturer.

STP130N6F7 Technical Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) @ 25??C 130 A
Gate Threshold Voltage (VGS(th)) 1.0 ?C 2.5 V
Static Drain-Source On-Resistance (RDS(on)) 1.7 m?? @ VGS=10V
Maximum Power Dissipation (PD) 83 W
Gate Charge (Qg) 32 nC
Operating Junction Temperature -55 to 175 ??C
Package Type TO-220

STP130N6F7 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and thermal performance.
  • High Current Capacity: Supports continuous drain currents up to 130A, enabling robust power handling in demanding applications.
  • Fast Switching Speed: Reduces switching losses, critical for high-frequency PWM and motor control circuits.
  • Thermal Stability: Designed to operate reliably across a wide temperature range, ensuring dependable performance in harsh environments.

Typical Applications

  • Power management in DC-DC converters and switching regulators, where efficient switching and thermal management are essential for system reliability.
  • Motor control circuits requiring high current handling and fast switching to optimize torque and reduce power loss.
  • Load switching in industrial automation systems that demand robust and reliable semiconductor devices.
  • Battery protection and management systems, ensuring safe and efficient power delivery with low on-resistance switching.

STP130N6F7 Advantages vs Typical Alternatives

This MOSFET offers a superior balance of low on-resistance and high current capability, reducing power dissipation compared to typical alternatives. Its fast switching characteristics enhance efficiency in PWM and motor control applications. Additionally, its robust thermal ratings and TO-220 package enable easier thermal management and integration into existing industrial designs, providing reliability and performance advantages in demanding environments.

STP130N6F7 Brand Info

The STP130N6F7 is manufactured by STMicroelectronics, a global leader in semiconductor technology. STMicroelectronics is renowned for its innovation in power management components and discrete devices, providing reliable and high-quality MOSFETs optimized for industrial and automotive applications. This device reflects ST??s commitment to delivering efficient power switching solutions that support energy-saving designs and enhanced system performance.

FAQ

What is the maximum voltage rating for this MOSFET?

The maximum drain-source voltage rating is 60V, which means this transistor can safely handle voltages up to 60 volts without breakdown, making it suitable for a broad range of mid-voltage power applications.

How does the on-resistance impact performance?

Lower on-resistance reduces conduction losses during operation, improving efficiency and reducing heat generation. At 1.7 milliohms, this device minimizes power dissipation, enhancing system reliability and thermal management.

Can this MOSFET handle high current loads continuously?

Yes, it supports continuous drain current up to 130 amperes at 25??C, enabling it to manage substantial loads in industrial and automotive circuits without degrading performance

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