STP12N120K5 STMicroelectronics 1200V 12A N-Channel MOSFET TO-220 Package

STP12N120K5 Overview

The STP12N120K5 is a high-voltage N-channel MOSFET designed for industrial power switching applications. Offering a maximum drain-source voltage (V_DS) of 1200 V and a low on-resistance, it enables efficient handling of high power loads with minimal conduction losses. This component is particularly suited for high-voltage circuits requiring reliable switching performance and robust avalanche energy capability. Its compact TO-220 package facilitates straightforward integration into power management systems, motor drives, and industrial power supplies. Engineers and sourcing specialists will appreciate its balance of ruggedness and efficiency for demanding environments. For more details, visit IC Manufacturer.

STP12N120K5 Technical Specifications

STP12N120K5 Key Features

• High breakdown voltage of 1200 V: Enables switching and control in high-voltage industrial circuits, enhancing application flexibility.
• Low R_DS(on) of 1.6 ??: Minimizes conduction losses and improves system efficiency, critical for power-sensitive designs.
• Robust avalanche energy rating: Provides better reliability under inductive load switching, reducing risk of MOSFET failure.
• TO-220 package: Facilitates effective heat dissipation and easy mounting on heatsinks, supporting high power dissipation.

Typical Applications

• Industrial motor control: Suitable for driving high-voltage motors with efficient switching and thermal management.
• Switch-mode power supplies (SMPS): Provides reliable high-voltage switching for power conversion circuits.
• Inductive load switching: Handles inductive loads such as relays and solenoids with robust avalanche capability.
• High voltage DC-DC converters: Supports efficient energy transfer in isolated and non-isolated converter topologies.

STP12N120K5 Advantages vs Typical Alternatives

This MOSFET offers a superior combination of high voltage rating and low on-resistance compared to many alternatives, improving overall efficiency and reducing thermal stress. Its robust avalanche energy handling enhances system reliability during inductive switching events. The widely used TO-220 package simplifies thermal management and integration. These factors make it an attractive choice for industrial engineers prioritizing power efficiency, reliability, and ease of assembly in high-voltage applications.

STP12N120K5 Brand Info

The STP12N120K5 is produced by STMicroelectronics, a global leader in semiconductor solutions for industrial and automotive markets. Known for their innovation and quality, STMicroelectronics offers this MOSFET as part of their power transistor portfolio tailored for high-voltage, high-current applications. The device benefits from ST??s advanced silicon technology and rigorous quality standards, ensuring robust performance and longevity in demanding environments.

FAQ

What is the maximum voltage this MOSFET can handle?

The device can withstand a maximum drain-to-source voltage (V_DS) of 1200 V, making it suitable for high-voltage