STP10NM60N Overview
The STP10NM60N is a robust N-channel MOSFET designed for high-voltage switching applications, offering a drain-source voltage rating of 600 V and a continuous drain current of 10 A. Its low on-resistance ensures efficient power handling with minimal conduction losses, making it ideal for power management in industrial and consumer electronics. With fast switching capabilities, this device supports high-frequency operation, optimizing energy efficiency and thermal performance. Engineered for reliability in demanding environments, the STP10NM60N is a versatile choice for engineers seeking a durable, high-performance transistor solution. For more details, visit the IC Manufacturer.
STP10NM60N Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Continuous Drain Current (ID) | 10 | A |
| On-Resistance (RDS(on)) | 0.75 | ?? (max) |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 | V |
| Maximum Gate-Source Voltage (VGS) | ??20 | V |
| Total Gate Charge (Qg) | 29 | nC |
| Power Dissipation (PD) | 75 | W |
| Operating Junction Temperature (Tj) | -55 to 175 | ??C |
STP10NM60N Key Features
- High voltage tolerance: Rated for 600 V drain-source voltage, enabling operation in demanding high-voltage power circuits.
- Low on-resistance: Minimizes conduction losses to enhance efficiency and reduce heat generation, beneficial for power-sensitive designs.
- Fast switching speed: Supports high-frequency operation, improving performance in switching power supplies and motor control.
- Robust thermal characteristics: With a maximum junction temperature of 175 ??C, it ensures reliable operation under elevated thermal stress.
Typical Applications
- Power converters and inverters in industrial systems requiring efficient high-voltage switching and reliable thermal management.
- Motor control circuits benefiting from fast switching and low conduction losses for improved energy efficiency.
- Switch-mode power supplies where high voltage rating and low gate charge support efficient power regulation.
- Lighting ballasts and other high-voltage electronic control systems demanding robust MOSFET performance.
STP10NM60N Advantages vs Typical Alternatives
This device offers a superior balance between high voltage capability and low on-resistance, enabling engineers to achieve efficient power management with reduced thermal dissipation. Compared to typical MOSFETs in its class, it features a lower gate charge, which improves switching efficiency and reduces electromagnetic interference. Its wide operating temperature range enhances reliability in harsh environments, making it an excellent choice for applications where durability and performance must coexist.
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STP10NM60N Brand Info
The STP10NM60N is a power MOSFET from STMicroelectronics, a leading global semiconductor manufacturer renowned for its innovation in power electronics. STMicroelectronics offers this device as part of their extensive portfolio targeting industrial, automotive, and consumer applications. The product combines advanced silicon technology with rigorous quality standards, ensuring dependable performance in both standard and demanding electronic designs.
FAQ
What is the maximum voltage rating of the STP10NM60N?
The maximum drain-source voltage rating is 600 V, allowing the device to handle high-voltage switching tasks safely in industrial and consumer applications.
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