STP10NK60Z STMicroelectronics 10A 600V N-Channel MOSFET in TO-220 Package

  • This device efficiently switches power to manage electrical loads, improving overall system control and performance.
  • It features a high voltage rating that supports demanding applications, ensuring safe operation under stress.
  • The compact package design enables easier integration on crowded circuit boards, saving valuable space.
  • Suitable for power supply and motor control circuits, it enhances energy efficiency and response times.
  • Manufactured with strict quality standards, it offers dependable operation and long-term durability.
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STP10NK60Z Overview

The STP10NK60Z is a high-voltage N-channel MOSFET designed for robust power switching applications. Featuring a 600 V drain-to-source voltage rating and a continuous drain current capability suitable for demanding industrial environments, this device is optimized for efficiency and reliability. Its low on-resistance minimizes conduction losses, enhancing overall system performance. The STP10NK60Z supports high-speed switching and thermal stability, making it an ideal choice for power converters, motor drives, and power management circuits. Available in a compact TO-220 package, it facilitates easy integration into a variety of power electronic designs. IC Manufacturer

STP10NK60Z Technical Specifications

ParameterValue
Drain-Source Voltage (VDS)600 V
Continuous Drain Current (ID)10 A
Gate Threshold Voltage (VGS(th))2.0 ?C 4.0 V
Maximum Power Dissipation (PD)125 W
On-Resistance (RDS(on))0.75 ?? (max) at VGS=10 V
Total Gate Charge (Qg)35 nC (typical)
Operating Junction Temperature (TJ)-55??C to +150??C
PackageTO-220

STP10NK60Z Key Features

  • High Voltage Rating: Supports up to 600 V, enabling operation in high-voltage power conversion and switching applications.
  • Low On-Resistance: Minimizes conduction losses, improving energy efficiency and reducing heat generation in power circuits.
  • Robust Current Handling: Continuous drain current of 10 A supports demanding load conditions, enhancing reliability in industrial environments.
  • Thermal Stability: Wide operating temperature range ensures stable performance under varying thermal conditions, extending device lifespan.

Typical Applications

  • Switched-mode power supplies (SMPS) where efficient high-voltage switching is critical to optimize power conversion and thermal management.
  • Motor control circuits requiring fast switching and high current capability for reliable operation of industrial motors.
  • Power inverters used in renewable energy systems, leveraging high voltage and current ratings for efficient energy conversion.
  • Load switching and power management in industrial automation systems demanding durable and low-loss MOSFET solutions.

STP10NK60Z Advantages vs Typical Alternatives

This MOSFET offers a superior combination of 600 V voltage rating and low on-resistance, providing enhanced efficiency compared to typical devices with higher conduction losses. Its robust current capacity and thermal tolerance improve reliability in high-stress industrial applications. These characteristics make it a preferred choice for engineers seeking precise switching performance and long-term stability without compromising power density or thermal management.

STP10NK60Z Brand Info

The STP10NK60Z is a product from STMicroelectronics, a global leader in semiconductor manufacturing renowned for high-quality power management components. This MOSFET is part of ST??s extensive portfolio targeting industrial and automotive markets, characterized by rigorous quality standards and innovative technology. STMicroelectronics supports this product with detailed datasheets and application notes, ensuring engineers have reliable resources for design and integration.

FAQ

What is the maximum drain-to-source voltage rating of this MOSFET?

The device supports a maximum drain-to-source voltage of 600 V, making it suitable for high-voltage power conversion and switching applications in industrial environments.

How does the on-resistance affect the performance of the MOSFET?

On-resistance directly impacts conduction losses and heat dissipation. A lower on-resistance, such as 0.75 ?? at a 10 V gate drive for this MOSFET, reduces power loss and improves overall efficiency in power circuits.

What package type is used for this MOSFET, and why is it important?

This device is housed in a TO-220 package, which provides effective heat dissipation and mechanical robustness, facilitating easy mounting

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