STP100N8F6 Overview
The STP100N8F6 is a high-performance N-channel MOSFET optimized for switching and power management applications. Featuring a low on-resistance and fast switching capability, it enables efficient power conversion and reduced thermal dissipation in industrial and automotive circuits. Its robust avalanche energy rating and compact TO-220 package ensure reliable operation under demanding conditions. Designed for applications requiring high current handling and minimal conduction losses, this device supports enhanced system efficiency and longevity. For detailed technical data and sourcing, visit IC Manufacturer.
STP100N8F6 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 80 | V |
| Continuous Drain Current (ID) at 25??C | 100 | A |
| Gate Threshold Voltage (VGS(th)) | 2 to 4 | V |
| Drain-Source On-Resistance (RDS(on)) max | 4.5 | m?? |
| Total Gate Charge (Qg) | 60 | nC |
| Input Capacitance (Ciss) | 850 | pF |
| Maximum Power Dissipation (PD) | 300 | W |
| Operating Junction Temperature (Tj) | -55 to 175 | ??C |
STP100N8F6 Key Features
- Low On-Resistance: Minimizes conduction losses, enabling high efficiency in power switching circuits and reducing heat generation.
- High Current Handling Capability: Supports continuous drain currents up to 100 A, making it suitable for demanding load conditions.
- Fast Switching Performance: Enables rapid transitions with low gate charge, improving overall system switching speed and reducing switching losses.
- Robust Thermal Management: The TO-220 package allows effective heat dissipation, enhancing device reliability in high-power environments.
Typical Applications
- Switching regulators and DC-DC converters where efficient power conversion and thermal management are critical for system performance.
- Motor control circuits requiring high current capability and fast switching to optimize dynamic response and efficiency.
- Power management modules in automotive electronics that demand robust operation under harsh temperature and voltage conditions.
- Load switching and relay replacement applications benefiting from compact size and low conduction losses to improve system reliability.
STP100N8F6 Advantages vs Typical Alternatives
This MOSFET offers superior conduction efficiency due to its low RDS(on), leading to reduced power loss compared to standard devices. Its high current rating and robust thermal characteristics provide enhanced reliability under heavy load. Additionally, the fast switching and moderate gate charge optimize performance in high-frequency applications, making it a preferred choice over generic MOSFETs for industrial and automotive power solutions.
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STP100N8F6 Brand Info
The STP100N8F6 is manufactured by STMicroelectronics, a global leader in semiconductor technology. Known for its broad portfolio of power MOSFETs, STMicroelectronics emphasizes device efficiency, reliability, and compactness. This particular model integrates advanced silicon technology to meet stringent industrial and automotive standards, ensuring high performance and durability in critical applications.
FAQ
What is the maximum voltage rating for the STP100N8F6?
The device is rated for a maximum drain-source voltage of 80 V, making it suitable for medium voltage switching applications where voltage spikes and transient conditions are common.
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How does the low RDS(on) benefit circuit performance?
A low on-resistance reduces conduction losses during operation, improving efficiency and lowering heat generation, which is critical for power-sensitive and thermally constrained designs.
Can the STP100N8F6 be used in high-temperature environments?
Yes, it supports an operating junction temperature range from -55??C up to
