STN4NF03L N-Channel MOSFET Transistor, 30V 4.5A, SOT-23 Package ?C STMicroelectronics

  • Switching transistor designed to efficiently control current flow in electronic circuits, enhancing overall system performance.
  • Features a low on-resistance that minimizes energy loss and improves thermal management during operation.
  • Compact package type reduces board space, enabling denser circuit designs and easier integration into tight layouts.
  • Ideal for use in power management applications where efficient switching helps extend device battery life.
  • Manufactured to meet rigorous quality standards, ensuring consistent performance and long-term reliability in various environments.
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STN4NF03L Overview

The STN4NF03L is a high-performance N-channel MOSFET designed for efficient switching and power management applications. It supports low on-resistance and fast switching speeds, enabling improved energy efficiency and thermal performance in industrial and consumer electronics. Its robust electrical characteristics make it an ideal choice for load switching, DC-DC converters, and motor control circuits. Sourced from a trusted manufacturer, this MOSFET ensures reliability and consistent performance across a range of operating conditions, providing engineers and sourcing specialists with a durable component optimized for low-voltage, high-current applications. For detailed technical data and procurement, visit IC Manufacturer.

STN4NF03L Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)30V
Continuous Drain Current (ID)4A
Gate-Source Voltage (VGS)??20V
On-Resistance (RDS(on)) at VGS=10 V0.047??
Total Gate Charge (Qg)7.5nC
Input Capacitance (Ciss)180pF
Power Dissipation (PD)1.25W
Operating Temperature Range-55 to 150??C

STN4NF03L Key Features

  • Low On-Resistance: Minimizes conduction losses to enhance energy efficiency in power switching applications.
  • High Continuous Drain Current: Supports up to 4 A for robust load driving capabilities, suitable for demanding industrial circuits.
  • Fast Switching Performance: Enables rapid switching frequency, which reduces switching losses and improves overall circuit efficiency.
  • Wide Operating Temperature Range: Ensures reliable operation in harsh environments, supporting extended product lifespan.

Typical Applications

  • Power management circuits in consumer electronics, where efficient load switching is critical for battery life optimization.
  • DC-DC converters requiring low on-resistance MOSFETs to achieve high efficiency and thermal stability.
  • Motor control applications that demand fast switching and reliable current handling capabilities.
  • General-purpose switching in industrial automation systems, benefiting from the device??s robustness and performance.

STN4NF03L Advantages vs Typical Alternatives

This MOSFET offers a competitive edge through its combination of low on-resistance and high current capacity, reducing power loss and heat generation compared to typical alternatives. Its fast switching characteristics improve efficiency in frequency-sensitive applications. Additionally, the wide operating temperature range and robust gate voltage tolerance contribute to enhanced reliability and integration ease in diverse industrial environments.

STN4NF03L Brand Info

The STN4NF03L is manufactured by STMicroelectronics, a global leader in semiconductor technologies. Recognized for quality and innovation, STMicroelectronics produces this N-channel MOSFET as part of its extensive portfolio of power MOSFETs. Designed for efficiency and durability, this device reflects ST??s commitment to delivering high-performance components for industrial, automotive, and consumer electronics markets.

FAQ

What is the maximum voltage rating of this MOSFET?

The device is rated for a maximum drain-source voltage of 30 V, making it suitable for low-voltage power switching applications where voltage spikes must be controlled within this limit.

How does the on-resistance affect circuit performance?

Lower on-resistance reduces conduction losses, which improves the overall efficiency of the circuit by minimizing heat

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