STN3P6F6 Vishay P-Channel MOSFET 30V 3.6A TO-252 Package Transistor

  • This device performs precise signal conversion, enabling efficient data processing in embedded systems.
  • Its operating frequency supports stable performance, ensuring consistent operation in demanding environments.
  • The compact LFCSP package reduces board space, facilitating integration into size-constrained designs.
  • Ideal for industrial automation, it enhances control accuracy and system responsiveness.
  • Manufactured with rigorous quality controls, the model STN3P6F6 offers dependable long-term reliability.
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STN3P6F6 Overview

The STN3P6F6 is a high-performance N-channel MOSFET designed for efficient switching and low conduction loss in power management applications. Featuring a low on-resistance and fast switching capabilities, this device supports enhanced energy efficiency and thermal performance in various industrial and consumer electronics. Its compact package and robust electrical characteristics make it suitable for demanding environments where reliability and precision matter. The STN3P6F6 is ideal for engineers seeking a durable, low-voltage MOSFET solution with optimized switching speed, supporting modern power conversion designs. For detailed technical information, visit IC Manufacturer.

STN3P6F6 Technical Specifications

Parameter Value Unit
Device Type N-Channel MOSFET ??
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 3.6 A
Gate Threshold Voltage (VGS(th)) 1.0 ?C 2.5 V
On-Resistance (RDS(on)) 0.055 ?? @ VGS=4.5V
Total Gate Charge (Qg) 6.7 nC
Input Capacitance (Ciss) 200 pF
Operating Junction Temperature (TJ) -55 to 150 ??C
Package Type SO-8 ??

STN3P6F6 Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing power efficiency and reducing heat dissipation in switching circuits.
  • Fast Switching Speed: Supports high-frequency operation, improving performance in DC-DC converters and motor control applications.
  • Compact SO-8 Package: Enables space-saving PCB layouts and facilitates thermal management in compact industrial designs.
  • Wide Operating Temperature Range: Ensures reliable function in harsh environments, from -55??C to 150??C junction temperatures.

Typical Applications

  • DC-DC converters and power supply modules requiring efficient switching at low voltages and currents up to 3.6 A.
  • Load switching in battery-powered devices where low gate charge and fast response reduce power consumption.
  • Motor driver circuits for industrial and consumer electronics leveraging the device??s fast switching and thermal stability.
  • General purpose switching in embedded systems and portable equipment demanding compact, reliable MOSFET solutions.

STN3P6F6 Advantages vs Typical Alternatives

This MOSFET offers a competitive advantage through its low on-resistance and fast switching performance, reducing power losses and improving efficiency compared to similar devices. Its compact SO-8 package supports integration in space-constrained designs, while the wide temperature range enhances reliability in industrial applications. These features combine to deliver a balance of sensitivity, speed, and robustness that typical alternatives may lack, making it a preferred choice for engineers optimizing power management solutions.

STN3P6F6 Brand Info

The STN3P6F6 is part of the semiconductor product portfolio from STMicroelectronics, a global leader in advanced semiconductor solutions. Known for their reliable, high-quality power MOSFETs, STMicroelectronics designs devices optimized for low power losses and high switching speeds, suitable for industrial, automotive, and consumer electronics markets. This MOSFET benefits from ST??s expertise in silicon technology and packaging, ensuring consistent performance and long-term availability for demanding engineering applications.

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