STN3N40K3 is a MOSFET transistor manufactured by STMicroelectronics. Here is an SEO-optimized product title within 80 characters: **STMicroelectronics STN3N40K3 N-Channel MOSFET Transistor – TO-220 Package**

  • STN3N40K3 controls electrical switching efficiently, enabling precise management of power flow in circuits.
  • The device supports high voltage operation, ensuring stable performance under demanding electrical conditions.
  • Its compact package design minimizes board space, facilitating integration into smaller electronic assemblies.
  • Ideal for motor control applications, it helps optimize performance and protect components from electrical stress.
  • Manufactured to meet strict quality standards, it offers reliable operation over extended usage periods.
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STN3N40K3 Overview

The STN3N40K3 is a high-performance N-channel MOSFET designed for industrial and power switching applications. This device offers robust electrical characteristics including a low on-resistance and high drain current capability, enabling efficient power management and thermal performance. Engineered for reliable operation in harsh environments, it supports switching frequencies suited for power supplies, motor drives, and load switching. Its compact package and rugged design make it ideal for demanding applications where efficiency and durability are critical. For detailed technical support and product sourcing, visit IC Manufacturer.

STN3N40K3 Technical Specifications

ParameterValue
TypeN-Channel MOSFET
Drain-Source Voltage (VDS)400 V
Continuous Drain Current (ID)3.1 A
On-Resistance (RDS(on))0.7 ?? (max)
Gate Threshold Voltage (VGS(th))2.0 – 4.0 V
Total Gate Charge (Qg)15 nC (typical)
Power Dissipation (PD)30 W
Operating Temperature Range-55 to +150 ??C
Package TypeTO-220

STN3N40K3 Key Features

  • High Voltage Rating: With a 400 V drain-source voltage, it supports high-voltage power switching, ensuring reliability in demanding industrial circuits.
  • Low On-Resistance: The low RDS(on) minimizes conduction losses, enhancing energy efficiency and reducing heat generation in power stages.
  • Robust Thermal Performance: Designed to operate up to 150 ??C, it ensures stable functioning under elevated temperature conditions, increasing system reliability.
  • Fast Switching Capability: Moderate total gate charge allows efficient switching, suitable for PWM controllers and motor drive applications.

Typical Applications

  • Switching power supplies, where high voltage and low on-resistance are critical for efficient energy conversion and reduced thermal stress.
  • Motor control circuits requiring reliable and fast switching MOSFETs to manage load currents effectively.
  • Industrial load switching, benefiting from its robust voltage and current handling capabilities in harsh environments.
  • General-purpose high-voltage switching applications that demand a compact form factor and consistent performance.

STN3N40K3 Advantages vs Typical Alternatives

The STN3N40K3 stands out with its combination of a 400 V rating and low on-resistance, delivering superior conduction efficiency compared to many standard MOSFETs. Its thermal endurance and reliable switching characteristics make it a preferred choice for power electronics, especially where heat dissipation and switching losses are critical. This results in enhanced system longevity and energy savings in industrial applications.

STN3N40K3 Brand Info

The STN3N40K3 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in high-quality power MOSFETs designed for demanding industrial and automotive applications. Known for innovation and reliability, the brand ensures that this MOSFET meets rigorous quality standards with consistent performance in high-voltage and high-power environments. ST??s extensive technical support and worldwide distribution network facilitate seamless integration of this device into complex power management systems.

FAQ

What is the maximum voltage rating of this MOSFET?

This MOSFET supports a maximum drain-source voltage of 400 V, making it suitable for high-voltage switching applications and ensuring safe operation in demanding industrial environments.

How does the on-resistance affect device efficiency?

The low on-resistance (maximum 0.7 ??) reduces conduction losses when the MOSFET is in the on-state, which improves energy efficiency and reduces heat dissipation, contributing to longer device and system lifetime.

What package type is used for this MOSFET?

The device is housed in a TO-220 package, offering good thermal conductivity

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