STMicroelectronics STPST8H100SF Power MOSFET, 100V N-Channel, TO-252 Package

  • This device provides efficient power switching, enhancing energy management in electronic circuits.
  • Its low on-resistance minimizes power loss, improving overall system efficiency and thermal performance.
  • The compact package reduces board space, allowing for denser and more flexible circuit designs.
  • Ideal for use in power supply modules where reliable switching is critical for stable operation.
  • Manufactured under strict quality controls to ensure consistent performance and long-term reliability.
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STPST8H100SF Overview

The STPST8H100SF is a high-voltage N-channel power MOSFET designed for efficient switching and low conduction losses. Featuring a 100 V drain-source voltage rating and a low on-resistance, this device is optimized for industrial and automotive power applications. Its trench-gate structure ensures fast switching and improved thermal performance, making it suitable for high-frequency circuits. The compact SMD package supports streamlined PCB design and reliable mounting. Engineers and sourcing specialists will appreciate the balance of ruggedness and performance offered by this MOSFET, available through IC Manufacturer.

STPST8H100SF Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)8A
Gate Threshold Voltage (VGS(th))1.0 – 3.0V
Drain-Source On-Resistance (RDS(on))8.0m??
Total Gate Charge (Qg)15nC
Input Capacitance (Ciss)560pF
Power Dissipation (PD)83W
Operating Junction Temperature (Tj)-55 to 150??C
Package TypeDFN8 (3×3 mm)

STPST8H100SF Key Features

  • Low Drain-Source On-Resistance: Minimizes conduction losses, ensuring higher efficiency in power switching applications.
  • High Voltage Rating (100 V): Supports demanding industrial and automotive voltage requirements, enhancing design flexibility.
  • Fast Switching Performance: Trench-gate technology reduces switching times, improving overall system responsiveness and reducing EMI.
  • Compact DFN8 Package: Enables space-saving PCB layouts while providing excellent thermal dissipation for reliable operation.

Typical Applications

  • DC-DC converters in industrial power management systems requiring low losses and high switching speed for efficient energy conversion.
  • Automotive electronic control units (ECUs) where reliable high-voltage MOSFETs help manage power distribution in harsh environments.
  • Battery management systems in energy storage solutions, benefiting from the device??s low on-resistance and thermal stability.
  • Load switching and protection circuits in industrial automation equipment, where ruggedness and fast response are critical for system safety.

STPST8H100SF Advantages vs Typical Alternatives

This MOSFET offers a compelling combination of low on-resistance and high voltage capability, outperforming many standard devices by delivering reduced conduction losses and superior switching speeds. Its compact DFN8 package enhances thermal management and integration into space-constrained designs. Compared to typical alternatives, it provides improved reliability and efficiency for demanding industrial and automotive applications, making it a preferred choice for engineers seeking robust power solutions.

STPST8H100SF Brand Info

The STPST8H100SF is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is known for its innovative power MOSFET technologies, focusing on energy efficiency and high performance. This device reflects ST??s commitment to delivering reliable, high-quality components tailored for industrial and automotive markets. The product benefits from ST??s extensive R&D and comprehensive quality control, ensuring consistent performance and long-term availability for critical applications.

FAQ

What is the maximum continuous drain current rating of this MOSFET?

The device supports a continuous drain current of 8 A, making it suitable for medium power applications requiring reliable current handling capabilities.

What package does this power MOSFET come in, and why is it beneficial?

It is housed in a compact DFN8 package measuring 3

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