STPST5H100SFY Overview
The STPST5H100SFY is a high-performance N-channel MOSFET optimized for power switching applications, providing excellent efficiency and fast switching capabilities. Designed to handle up to 100 V drain-to-source voltage with a low RDS(on), this device ensures minimal conduction losses in power management circuits. Its robust design supports high current loads and enhances thermal performance, making it ideal for industrial and automotive applications. The package offers reliable mechanical stability and easy integration into compact designs. For detailed technical resources and purchasing information, visit IC Manufacturer.
STPST5H100SFY Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Continuous Drain Current (ID) @ 25??C | 65 | A |
| RDS(on) (Max) @ VGS=10 V | 3.5 | m?? |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 | V |
| Total Gate Charge (Qg) | 45 | nC |
| Input Capacitance (Ciss) | 1500 | pF |
| Power Dissipation (PD) | 150 | W |
| Operating Temperature Range | -55 to 175 | ??C |
STPST5H100SFY Key Features
- Low RDS(on) of 3.5 m??: Minimizes conduction losses, improving overall power efficiency in switching circuits.
- High voltage rating of 100 V: Provides robust operation in high-voltage industrial and automotive environments.
- Fast switching speed: Reduces switching losses, enhancing system performance in high-frequency applications.
- Thermal stability up to 175??C: Ensures reliable operation under harsh temperature conditions for extended product life.
Typical Applications
- DC-DC converters and power management modules requiring efficient switching and low conduction losses in industrial power supplies.
- Automotive electronic control units (ECUs) that demand high voltage handling and thermal stability for reliable operation.
- Motor control circuits where fast switching and low on-resistance improve energy efficiency and system response.
- Battery management systems (BMS) in energy storage solutions, leveraging the device??s low gate charge for better switching performance.
STPST5H100SFY Advantages vs Typical Alternatives
This device offers a compelling combination of low on-resistance and high voltage capability, which leads to enhanced efficiency and reduced heat generation compared to typical MOSFETs in its class. Its fast switching characteristics and thermal robustness provide reliability in demanding industrial and automotive contexts. The balance between performance and ruggedness makes it a preferred choice over alternatives with higher losses or lower temperature ratings.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
STPST5H100SFY Brand Info
The STPST5H100SFY is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for delivering high-quality power MOSFETs designed to meet stringent industrial and automotive standards. This product reflects the company’s commitment to innovation, reliability, and efficiency, benefiting engineers who require robust components for power conversion and management applications.
FAQ
What is the maximum continuous current this MOSFET can handle?
The maximum continuous drain current at 25??C for this MOSFET is 65 A, enabling efficient conduction in high-current power switching applications without compromising device longevity.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
How does the gate threshold voltage affect device operation?
The gate threshold voltage range of 2.0 to 4.0 V defines the minimum gate-source voltage required to begin conduction. This ensures stable switching behavior and helps engineers design appropriate gate drive circuits for reliable operation.
