STMicroelectronics STPST2H100ZFY Power MOSFET, Dual N-Channel, TO-220 Package

  • This device performs high-efficiency power switching, enabling effective energy management in electronic circuits.
  • Featuring a low on-resistance, it minimizes power loss and improves overall system efficiency under load.
  • The compact package design reduces board space, facilitating integration into densely populated circuit layouts.
  • Ideal for use in power supply modules, it helps maintain stable voltage levels during variable load conditions.
  • Manufactured with rigorous quality control, STPST2H100ZFY ensures consistent performance and long-term reliability.
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STPST2H100ZFY Overview

The STPST2H100ZFY is a high-performance power MOSFET designed for efficient switching and low conduction losses in industrial and automotive applications. Featuring a robust 100 V drain-source voltage rating and low on-resistance, this device enables improved thermal management and energy efficiency. Its Trench technology enhances switching speed, making it suitable for high-frequency operation. Compact in a TO-220 package, it supports easy integration into power management and motor control circuits. Engineers and sourcing specialists will find this MOSFET a reliable choice for demanding power conversion tasks. For more detailed information, visit IC Manufacturer.

STPST2H100ZFY Technical Specifications

ParameterValue
Drain-Source Voltage (VDS)100 V
Continuous Drain Current (ID) @ 25??C75 A
Pulse Drain Current (IDM)300 A
Gate Threshold Voltage (VGS(th))2.0 ?C 4.0 V
On-Resistance (RDS(on)) @ 4.5 V2.2 m??
On-Resistance (RDS(on)) @ 10 V1.6 m??
Total Gate Charge (Qg)56 nC
Gate-Source Charge (Qgs)9.6 nC
Gate-Drain Charge (Qgd)15 nC
Power Dissipation (PD) @ 25??C200 W
Operating Junction Temperature-55??C to +175??C
PackageTO-220-3L

STPST2H100ZFY Key Features

  • Low On-Resistance: Minimizes conduction losses, improving efficiency and reducing heat generation in power circuits.
  • High Current Capability: Supports up to 75 A continuous current, suitable for demanding industrial applications requiring robust power handling.
  • Fast Switching Speed: Trench technology enables rapid switching, reducing switching losses and enabling high-frequency operation.
  • Thermal Stability: Rated for junction temperatures up to 175??C, ensuring reliable performance under harsh thermal conditions.
  • Robust Package: The TO-220 package facilitates efficient heat dissipation and simple mounting in power electronics systems.
  • Gate Charge Optimization: Balanced gate charge parameters allow for lower gate drive power and improved switching efficiency.

Typical Applications

  • Industrial power supplies and DC-DC converters benefiting from low conduction and switching losses for improved energy efficiency.
  • Motor control circuits requiring high current capability and fast switching for precision speed and torque management.
  • Battery management and automotive electronic systems where robust thermal performance and high reliability are critical.
  • Renewable energy inverters and power conditioning systems that demand efficient power handling and thermal stability.

STPST2H100ZFY Advantages vs Typical Alternatives

This MOSFET offers a compelling combination of low on-resistance and high current handling capacity compared to typical alternatives. Its Trench technology ensures faster switching speeds and lower gate charge, which results in higher efficiency and reduced thermal stress. The broad operating temperature range and robust TO-220 packaging enhance reliability in industrial environments. These features collectively deliver better power density and system-level performance, making it an optimal choice for engineers focused on power optimization and durability.

STPST2H100ZFY Brand Info

The STPST2H100ZFY is a product from STMicroelectronics, a global leader in semiconductor solutions. Known for innovation and quality, STMicroelectronics specializes in power discrete components that meet the rigorous demands of industrial, automotive, and consumer electronics markets. This device exemplifies ST??s expertise in Trench MOSFET technology, delivering

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