STPST2H100AFY Overview
The STPST2H100AFY is a high-performance N-channel MOSFET designed for efficient power switching in industrial and automotive applications. Featuring a low RDS(on) and robust avalanche energy capability, this transistor ensures reliable operation under demanding electrical conditions. Its compact package and optimized electrical characteristics provide engineers with a powerful solution for enhancing system efficiency and thermal management. Ideal for applications requiring fast switching and high current handling, the device supports high-frequency operation while maintaining low conduction losses. For detailed specifications and purchasing options, visit IC Manufacturer.
STPST2H100AFY Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 57 A (at 25??C) |
| RDS(on) (Max) | 1.8 m?? @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Total Gate Charge (Qg) | 43 nC (typical) |
| Maximum Power Dissipation (PD) | 150 W |
| Operating Junction Temperature (TJ) | -55??C to +175??C |
| Package Type | PowerFLAT 5×6 mm |
STPST2H100AFY Key Features
- Low RDS(on) of 1.8 m??: Minimizes conduction losses, improving overall efficiency in power conversion applications.
- High continuous drain current capability: Supports currents up to 57 A, enabling robust performance in high-power circuits.
- Compact PowerFLAT package: Enhances thermal dissipation and simplifies PCB layout, promoting reliable operation under thermal stress.
- Fast switching characteristics: Reduces switching losses and electromagnetic interference, critical for high-frequency power management.
Typical Applications
- DC-DC converters in automotive and industrial power systems, where efficient high-current switching is essential for performance and thermal management.
- Motor control circuits requiring robust MOSFETs capable of handling high transient currents with low losses.
- Power supplies for telecommunications and data centers that demand reliable high-voltage switching components.
- Battery management systems in electric vehicles and energy storage solutions, benefiting from low on-resistance and high current handling.
STPST2H100AFY Advantages vs Typical Alternatives
This MOSFET offers a superior combination of low on-resistance and high current handling compared to typical alternatives, resulting in improved power efficiency and reduced heat generation. Its compact package and robust electrical ratings provide enhanced reliability and easier system integration. The device??s fast switching capability minimizes energy loss and electromagnetic interference, making it an ideal choice for modern industrial and automotive power electronics.
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STPST2H100AFY Brand Info
The STPST2H100AFY is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for delivering innovative power management devices that support energy-efficient systems across automotive, industrial, and consumer markets. This MOSFET leverages ST??s advanced silicon technology and packaging expertise, offering designers a reliable component that meets stringent performance and quality standards.
FAQ
What is the maximum voltage rating of the STPST2H100AFY?
The device supports a maximum drain-source voltage of 100 V, making it suitable for various medium-voltage power switching applications commonly found in automotive and industrial environments.
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How does the low RDS(on) benefit my circuit design?
A
