STIB1560DM2T-LZ Overview
The STIB1560DM2T-LZ is a high-performance dual N-channel MOSFET designed for industrial and power management applications. Featuring low on-resistance and high current handling capabilities, it delivers efficient switching and thermal management in compact surface-mount packaging. This device supports enhanced power conversion efficiency and robust reliability, making it suitable for demanding environments. Its optimized electrical characteristics enable seamless integration into DC-DC converters, power supplies, and motor control circuits. For detailed specifications and additional product support, visit the IC Manufacturer.
STIB1560DM2T-LZ Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V |
| Continuous Drain Current (ID) @ 25??C | 50 | A |
| RDS(on) (max) @ VGS=10 V | 1.7 | m?? |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 | V |
| Total Gate Charge (Qg) | 35 | nC |
| Power Dissipation (PD) | 100 | W |
| Operating Junction Temperature (TJ) | -55 to +175 | ??C |
| Package Type | PowerSO-8 (Dual MOSFET) | – |
STIB1560DM2T-LZ Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall power efficiency in switching applications.
- High Continuous Drain Current: Supports up to 50A, enabling high load handling capabilities for demanding power circuits.
- Compact PowerSO-8 Package: Facilitates easy PCB integration and effective thermal dissipation for robust system design.
- Wide Operating Temperature Range: Ensures reliable performance in harsh industrial environments from -55??C to +175??C.
Typical Applications
- High-efficiency DC-DC converters requiring low conduction losses and fast switching performance to optimize power delivery.
- Industrial motor drivers where dual MOSFET configuration supports compact, reliable H-bridge designs.
- Power management in servers and telecom equipment demanding high current switching with minimal heat generation.
- Battery protection and control circuits benefiting from low gate charge and robust thermal characteristics.
STIB1560DM2T-LZ Advantages vs Typical Alternatives
This device offers superior on-resistance and higher continuous current ratings compared to typical MOSFET alternatives, resulting in enhanced efficiency and reduced thermal stress. Its compact dual MOSFET package simplifies board layout and lowers system size. Additionally, the wide operating temperature range and high power dissipation capability provide increased reliability in industrial applications, making it an optimal choice for engineers seeking robust and efficient power solutions.
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STIB1560DM2T-LZ Brand Info
The STIB1560DM2T-LZ is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Recognized for innovation and quality, STMicroelectronics specializes in power management and discrete components like MOSFETs designed for industrial, automotive, and consumer electronics. The STIB1560DM2T-LZ reflects ST??s commitment to delivering high-performance, reliable components that meet stringent industry standards for power efficiency and thermal management.
FAQ
What is the maximum drain-source voltage rating for this MOSFET?
The maximum drain-source voltage (VDS) for this device is 60 volts. This rating defines the highest voltage the MOSFET channel can handle without breakdown, making
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