STH275N8F7-2AG Overview
The STH275N8F7-2AG is a high-performance N-channel MOSFET designed for efficient power switching and robust operation in demanding industrial environments. With a low RDS(on) and a maximum drain current rating suitable for medium to high power applications, this device ensures reduced conduction losses and enhanced thermal management. Its optimized gate charge enables fast switching speeds, improving overall system efficiency. Ideal for applications in power supply units, motor drivers, and DC-DC converters, this MOSFET offers reliable performance and ease of integration. For detailed specifications and purchasing options, visit the IC Manufacturer.
STH275N8F7-2AG Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 75 | V |
| Continuous Drain Current (ID) at 25??C | 275 | A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 | V |
| Drain-Source On-Resistance (RDS(on)) | 8.7 | m?? |
| Total Gate Charge (Qg) | 46 | nC |
| Gate-Source Charge (Qgs) | 10 | nC |
| Gate-Drain Charge (Qgd) | 12 | nC |
| Maximum Power Dissipation (PD) | 280 | W |
| Operating Junction Temperature | -55 to 175 | ??C |
| Package Type | TO-220AB | ?C |
STH275N8F7-2AG Key Features
- Low On-Resistance: Minimizes conduction losses, enabling higher efficiency in power switching circuits.
- High Drain Current Capability: Supports up to 275A continuous current, suitable for demanding load conditions.
- Optimized Gate Charge: Allows faster switching speeds, reducing switching losses and improving overall device efficiency.
- Wide Operating Temperature Range: Reliable performance from -55??C to 175??C ensures durability in harsh environments.
- Robust TO-220AB Package: Provides efficient heat dissipation and easy mounting for industrial applications.
- Stable Threshold Voltage: Ensures consistent switching behavior across operating conditions.
Typical Applications
- Power supply units where efficient energy conversion and thermal management are critical for system reliability and performance.
- Motor control circuits requiring high current handling and fast switching to enhance dynamic response and reduce power loss.
- DC-DC converters in industrial and automotive systems demanding compact, high-efficiency semiconductor switches.
- High-frequency switching applications benefiting from low gate charge and minimal switching losses to improve overall system efficiency.
STH275N8F7-2AG Advantages vs Typical Alternatives
This MOSFET offers a competitive advantage through its combination of very low RDS(on) and high continuous current rating, enabling more efficient power management compared to typical alternatives. Its optimized gate charge reduces switching losses, making it suitable for high-frequency applications. The robust thermal performance and industry-standard TO-220AB package facilitate easier integration and improved reliability, which are critical for industrial power electronics.
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STH275N8F7-2AG Brand Info
The STH275N8F7-2AG is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power MOSFETs optimized for energy efficiency and system reliability. This product is part of their extensive portfolio targeting industrial power management, automotive, and consumer electronics markets. Known for stringent quality standards and innovation, STMicroelectronics ensures this device meets demanding technical and environmental requirements, supporting designers in achieving high
