The STGIF10CH60TS-E is a high-performance silicon carbide (SiC) power transistor designed for industrial power switching applications. With a blocking voltage rating of 600 V and a continuous drain current capability of 10 A, it delivers efficient switching and low conduction losses. This robust device features a TO-220-3L package optimized for thermal management and ease of assembly. Ideal for high-frequency operation and high-temperature environments, it supports improved system efficiency and reliability. Engineers and sourcing specialists seeking advanced power semiconductor solutions will benefit from its optimized balance of performance and ruggedness. For detailed specifications and support, visit IC Manufacturer.
STGIF10CH60TS-E Technical Specifications
Parameter
Value
Unit
Type
SiC MOSFET
Drain-Source Voltage (VDS)
600
V
Continuous Drain Current (ID)
10
A
Gate Threshold Voltage (VGS(th))
3.5 (typical)
V
RDS(on) (max)
0.85
??
Package Type
TO-220-3L
Operating Junction Temperature (Tj)
-55 to +175
??C
Gate Charge (Qg)
14
nC
Typical Input Capacitance (Ciss)
280
pF
STGIF10CH60TS-E Key Features
High blocking voltage of 600 V: Enables use in demanding industrial power conversion and motor control circuits.
Low RDS(on) of 0.85 ??: Reduces conduction losses, improving overall system efficiency and thermal performance.
Wide operating temperature range (-55??C to +175??C): Ensures reliable operation under harsh environmental conditions.
TO-220-3L package: Facilitates effective heat dissipation and straightforward PCB mounting for robust, long-lasting designs.
Typical Applications
Power supplies and converters requiring efficient high-voltage switching capabilities, such as industrial AC/DC adapters and DC/DC converters, benefit from the device??s fast switching and thermal stability.
Motor drives and control systems leverage the transistor’s high voltage rating and low losses for enhanced performance and reliability.
Renewable energy inverters utilize the device??s efficiency and robustness for solar and wind power conversion applications.
Electric vehicle (EV) onboard chargers and auxiliary power modules benefit from the compact package and elevated temperature tolerance.
STGIF10CH60TS-E Advantages vs Typical Alternatives
This transistor provides superior efficiency compared to traditional silicon MOSFETs due to its low on-resistance and fast switching capabilities. Its high blocking voltage and wide temperature range enable reliable operation in demanding industrial environments. Compared to competing power devices, it offers improved thermal management and integration flexibility, making it ideal for applications requiring high reliability and compact form factors.
The STGIF10CH60TS-E is manufactured by STMicroelectronics, a global leader in semiconductor technology. STMicroelectronics specializes in innovative power devices and integrated circuits that serve automotive, industrial, and consumer markets. This SiC MOSFET reflects ST??s commitment to delivering high-performance power solutions that enhance energy efficiency and system reliability. The product benefits from ST??s extensive technical support and quality assurance, ensuring consistent performance in critical industrial applications.
