STMicroelectronics STGB30V60DF 30A 600V IGBT Transistor – TO-247 Package

  • This device provides efficient power switching to optimize energy management in electronic circuits.
  • The rated voltage supports reliable operation under varying electrical loads, ensuring stable performance.
  • Its compact package minimizes board space, facilitating integration into densely packed electronic assemblies.
  • Ideal for power supply modules, it enhances system efficiency by reducing power loss during switching.
  • Manufactured with strict quality controls to ensure consistent reliability and long-term durability in applications.
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STGB30V60DF Overview

The STGB30V60DF is a high-performance fast recovery diode designed for industrial power applications requiring efficient switching and low power losses. With a maximum repetitive peak reverse voltage of 600 V and a forward current rating of 30 A, this device supports robust operation in demanding environments. Its ultrafast recovery time significantly reduces switching losses, making it ideal for improving energy efficiency in power converters and motor drives. Engineered for reliability and thermal stability, the STGB30V60DF offers a compact package suitable for space-constrained designs. Available through IC Manufacturer, it meets the needs of engineers and sourcing specialists focused on durable semiconductor components.

STGB30V60DF Technical Specifications

ParameterValueUnit
Maximum Repetitive Peak Reverse Voltage (VRRM)600V
Average Forward Current (IF(AV))30A
Non-Repetitive Peak Surge Current (IFSM)300A
Forward Voltage Drop (VF) at IF = 30 A1.7V
Reverse Recovery Time (trr)75ns
Junction Temperature Range (Tj)-55 to 150??C
Storage Temperature Range (Tstg)-55 to 150??C
Package TypeTO-247

STGB30V60DF Key Features

  • Ultrafast recovery time: Minimizes switching losses in high-frequency applications, improving overall system efficiency.
  • High surge current capability: Supports transient overloads up to 300 A, enhancing device robustness under fault conditions.
  • Low forward voltage drop: Reduces conduction losses, contributing to lower heat generation and improved thermal management.
  • Wide junction temperature range: Ensures reliable operation in harsh industrial environments, extending device lifespan.

Typical Applications

  • Switch-mode power supplies (SMPS) where ultrafast recovery diodes are essential to maintain high efficiency and reduce electromagnetic interference.
  • Motor drive inverters requiring fast switching diodes to improve system response and reduce switching losses.
  • Uninterruptible power supplies (UPS) that benefit from high surge current capability for transient load handling.
  • Renewable energy inverters where reliable diode performance is critical for conversion efficiency and durability.

STGB30V60DF Advantages vs Typical Alternatives

This fast recovery diode offers superior switching speed and low forward voltage compared to traditional standard recovery diodes, resulting in lower power dissipation and higher efficiency. Its high surge current rating and wide operating temperature range enhance reliability and robustness. These attributes make it a preferred choice over generic diodes in industrial power electronics, enabling better thermal management and longer service life.

STGB30V60DF Brand Info

The STGB30V60DF is manufactured by STMicroelectronics, a leading global semiconductor company specializing in power management and discrete components. Known for innovation and quality, STMicroelectronics offers this device as part of its extensive portfolio of ultrafast diodes designed for demanding industrial and automotive applications. The product combines ST??s advanced silicon technology with rigorous quality standards, ensuring consistent performance and reliability across a wide range of operating conditions.

FAQ

What is the maximum repetitive peak reverse voltage for this diode?

The device supports a maximum repetitive peak reverse voltage of 600 V, making it suitable for medium voltage power applications where high voltage blocking capability is required.

How does the fast recovery time benefit power electronics?

The ultrafast recovery time of 75 ns reduces switching losses and electromagnetic interference in switching circuits, which improves overall efficiency and thermal performance in converters and motor drives.

What package type is used for this diode?

This diode is housed in a TO-247 package, which provides excellent thermal dissipation and mechanical stability, making it suitable for high current industrial applications.

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Can the diode handle high surge currents during transient events?

Yes, it is rated for a non

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