STMicroelectronics STGB18N40LZT4 IGBT Transistor 40A 1200V TO-220 FullPack Package

  • This device functions as a power MOSFET, enabling efficient switching and power control in electronic circuits.
  • Its voltage rating supports stable operation under high-voltage conditions, ensuring circuit protection and performance.
  • The compact package type reduces board space requirements, facilitating tighter layouts and improved thermal management.
  • Ideal for use in power supply modules where rapid switching enhances energy efficiency and system responsiveness.
  • Manufactured to meet stringent quality standards, providing dependable operation in demanding environments.
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STGB18N40LZT4 Overview

The STGB18N40LZT4 is a high-performance N-channel IGBT designed for industrial power switching applications. Featuring a breakdown voltage of 400 V and a continuous collector current rating of 18 A, this device delivers efficient switching with low conduction losses. Its rugged construction supports robust operation under demanding electrical and thermal conditions, making it suitable for inverter circuits, motor drives, and power supplies. The compact TO-220 package enables easy integration in various power electronic systems, while maintaining excellent thermal dissipation. Engineers and sourcing specialists trust this device for reliable and consistent performance in medium-power switching environments. For more details, visit IC Manufacturer.

STGB18N40LZT4 Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (V_CES)400V
Continuous Collector Current (I_C)18A
Gate-Emitter Voltage (V_GE)??20V
Collector Power Dissipation (P_tot)150W
Pulse Collector Current (I_CM)72A
Junction Temperature (T_j)-55 to 150??C
Turn-On Delay Time (t_d(on))40ns
Turn-Off Delay Time (t_d(off))135ns
Package TypeTO-220?C

STGB18N40LZT4 Key Features

  • High voltage blocking: Supports up to 400 V, enabling use in a wide range of industrial power applications.
  • Robust current handling: 18 A continuous collector current rating provides reliable conduction in demanding loads.
  • Fast switching speeds: Turn-on and turn-off delay times under 150 ns reduce switching losses for improved efficiency.
  • Thermal stability: Rated junction temperature up to 150??C ensures reliable operation under elevated temperature conditions.
  • Compact TO-220 package: Facilitates easy mounting and effective heat dissipation in power modules and circuits.

Typical Applications

  • Industrial motor control and inverter circuits, where the device enables efficient switching and power management for variable speed drives.
  • Switched mode power supplies (SMPS) requiring fast switching and high voltage capability for efficient power conversion.
  • Uninterruptible power supplies (UPS) that benefit from the device??s robust conduction and thermal performance.
  • General-purpose power switching in industrial automation and control systems, supporting reliable and long-lasting operation.

STGB18N40LZT4 Advantages vs Typical Alternatives

This IGBT offers superior switching performance and high voltage rating compared to many generic transistors, reducing conduction and switching losses to improve system efficiency. Its robust current capacity and thermal tolerance enhance reliability under heavy load and high temperature conditions. The TO-220 package facilitates easier integration and heat management, providing a compact, cost-effective solution for industrial power electronics where durability and performance are critical.

STGB18N40LZT4 Brand Info

The STGB18N40LZT4 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for its high-quality power devices, including IGBTs, MOSFETs, and diodes that serve various industrial, automotive, and consumer applications. This product exemplifies ST??s commitment to delivering reliable, efficient, and high-performance components tailored to demanding power electronics markets. The company??s extensive technical support and global supply chain ensure consistent availability and expert guidance for design engineers and purchasing specialists.

FAQ

What is the maximum collector-emitter voltage rating for this IGBT?

The maximum collector-emitter voltage (V_CES) is 400 V, allowing safe operation in applications requiring medium to high voltage blocking capability without risk of breakdown.

Can the device handle high temperature environments?

Yes, the rated junction temperature range extends up to 150??C, enabling reliable performance and thermal stability

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