STMicroelectronics STB12NK80ZT4 N-Channel MOSFET 12A 800V TO-220F Package

  • This device efficiently switches electrical current to control power flow, improving overall system performance.
  • With a low on-resistance, it minimizes power loss and heat generation during operation.
  • Its compact CBZ package enables easy integration and saves valuable board space in designs.
  • Ideal for switching applications in power management circuits, enhancing energy efficiency and control.
  • Manufactured with strict quality controls to ensure consistent reliability under standard operating conditions.
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STB12NK80ZT4 Overview

The STB12NK80ZT4 is a high-performance N-channel power MOSFET designed for efficient switching and robust operation in industrial and power electronics applications. With a voltage rating of 800 V and a continuous drain current of 12 A, it offers reliable performance in demanding environments. This device features a low gate charge for fast switching and reduced power loss, making it ideal for power conversion and motor control systems. Its TO-220 package ensures effective thermal management and easy integration. Manufactured by IC Manufacturer, the STB12NK80ZT4 delivers dependable efficiency and durability for engineers seeking optimized power solutions.

STB12NK80ZT4 Technical Specifications

ParameterSpecification
TypeN-Channel MOSFET
Drain-Source Voltage (VDS)800 V
Continuous Drain Current (ID)12 A
Gate Threshold Voltage (VGS(th))2.0 ?C 4.0 V
Drain-Source On-Resistance (RDS(on))0.55 ?? (max) at VGS = 10 V
Gate Charge (Qg)28 nC (typical)
Maximum Power Dissipation (PD)75 W
Operating Junction Temperature (Tj)-55 ??C to +150 ??C
PackageTO-220

STB12NK80ZT4 Key Features

  • High Voltage Rating: Supports up to 800 V, enabling use in high-voltage switching applications with safety margin and reliability.
  • Low On-Resistance: Minimizes conduction losses, improving overall efficiency and thermal performance in power circuits.
  • Fast Switching Capability: Low gate charge allows rapid switching, reducing switching losses and enhancing performance in PWM and inverter designs.
  • Robust Thermal Handling: TO-220 package offers effective heat dissipation, supporting high power operation and long-term device reliability.

Typical Applications

  • Power supply units, including switch-mode power supplies (SMPS), where efficient high-voltage switching is critical for energy savings and compact design.
  • Motor control circuits for industrial equipment requiring reliable high-voltage switching and robustness against voltage spikes.
  • Lighting ballast and electronic transformers benefiting from fast switching and low loss characteristics to improve efficiency.
  • General-purpose high-voltage switching in UPS systems, battery chargers, and energy conversion modules.

STB12NK80ZT4 Advantages vs Typical Alternatives

This MOSFET offers a superior balance of high voltage capability and low on-resistance, reducing conduction and switching losses compared to many alternatives. Its low gate charge improves switching speed and efficiency, while the TO-220 package facilitates better thermal management. These factors collectively enhance reliability and power density, making it a preferred choice for engineers seeking robust, efficient, and cost-effective power switch solutions in industrial electronics.

STB12NK80ZT4 Brand Info

The STB12NK80ZT4 is a product from STMicroelectronics, a global leader in semiconductor solutions. Known for innovation in power and analog devices, STMicroelectronics designs this MOSFET to meet rigorous industrial standards, combining performance, reliability, and ease of use. The device supports ST??s commitment to providing high-efficiency power components that address the evolving needs of power management, automotive, and industrial sectors.

FAQ

What is the maximum voltage rating of this MOSFET?

The device is rated for a maximum drain-to-source voltage of 800 volts, making it suitable for high-voltage switching applications in power electronics.

How does the low gate charge benefit switching performance?

A lower gate charge reduces the energy required to switch the MOSFET on and off. This improves switching speed and decreases power losses during transitions, enhancing overall efficiency in high-frequency applications.

What package does this device come in and why is it important?

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