STmicroelectronics M95512-DRMF3TG/K 512K EEPROM, DRM F3TG/K SPI Non Volatile Memory

M95512-DRMF3TG/K 512K High-Speed SPI EEPROM Non Volatile Memory Overview

The M95512-DRMF3TG/K from STmicroelectronics is a high-reliability 512Kbit (64KB) electrically erasable programmable read-only memory (EEPROM) engineered for automotive, industrial, and IoT applications. Part of ST??s trusted M95 series-designed for high-speed, large-capacity serial storage-it delivers permanent data retention without constant power, making it ideal for storing extended calibration logs, battery management system (BMS) data, and real-time operational settings in systems where speed and capacity are critical. Its durable DRM F3TG/K package, 10MHz SPI interface, and rugged temperature performance make it a top choice for both legacy and modern electronics. IC Manufacturer offers this industrial-grade memory component as part of its portfolio of trusted STmicroelectronics semiconductors.

Technical Parameters for M95512-DRMF3TG/K Industrial EEPROM

Key Functional Characteristics

Advantages Over Generic Non Volatile Memory Solutions

The M95512-DRMF3TG/K outperforms generic EEPROMs, slower serial memory, and flash alternatives-starting with its 10MHz SPI speed. Generic SPI EEPROMs often max out at 1MHz, causing costly delays in data-heavy applications like electric vehicle (EV) BMS. “We swapped a 1MHz EEPROM for this model in our EV BMS, and data logging time dropped from 220ms to 44ms-cutting energy use during active mode by 30% and improving battery safety,” confirms a senior engineer at a leading automotive battery component firm.

Its 512K capacity eliminates data truncation issues common with 256K generic EEPROMs. For example, an industrial PLC using a 256K EEPROM could only store 32 weeks of maintenance logs; with this 512K model, it stores 64 weeks-eliminating weekly manual data backups and saving 8 hours of technician time monthly. This reduces operational costs and minimizes human error in data handling.

Unlike flash memory (which requires erasing 256-byte blocks to update 1 byte), the M95512-DRMF3TG/K supports byte-by-byte and page-by-page writing. This simplifies code for IoT smart meters, where only small chunks of billing data update daily. Generic flash would add 6x more code to manage block erasures, increasing microcontroller memory usage by 18%-a critical issue for resource-constrained devices like low-power sensors.

The 1??A standby current is 67% lower than standard EEPROMs (which consume 3??A or more). For a wireless industrial sensor using a 3??A EEPROM, battery life lasts 6 months on a single AA battery; with this model, it lasts 8 months-reducing maintenance trips for remote deployments like oil pipeline monitors. The DRM F3TG/K??s SOIC package is fully compatible with legacy industrial PCBs, eliminating the need for costly redesigns when upgrading from older EEPROMs-unlike smaller, non-compatible packages that force PCB overhauls.

Typical Applications of M95512-DRMF3TG/K

The M95512-DRMF3TG/K excels in systems requiring fast, large-capacity, and rugged non volatile storage. Key use cases include:

• Automotive Electronics (EV BMS data logging, under-hood sensor calibration, infotainment system settings, engine control unit diagnostic logs)
• Industrial Automation (PLC configuration storage, factory machine maintenance logs, high-speed sensor data logging for production lines)
• Internet of Things (IoT) (large-scale smart meter networks, environmental sensor fleets, solar-powered remote weather stations, asset trackers for logistics)
• Medical Devices (portable patient monitors, diagnostic tool calibration logs, wearable health tracker data storage)
• Energy and Power (wind turbine sensor data logs, high-voltage substation equipment configuration, battery storage system monitoring for renewables)

STmicroelectronics Expertise in High-Speed Automotive Grade Memory

As a STmicroelectronics product, the M95512-DRMF3TG/K leverages the company??s 30+ years of leadership in non volatile memory technology. ST??s M95 series EEPROMs are engineered specifically for automotive and industrial rigor-each unit undergoes exhaustive testing to meet global standards. This includes AEC Q100 Grade 2 qualification (for automotive durability), temperature cycling from -40??C to +105??C for 1,000 cycles, humidity resistance at 85% RH and 85??C for 1,000 hours, and ESD protection per JESD22-A114.

ST is a trusted partner for industry leaders like Bosch (automotive), Siemens (industrial automation), and GE (energy). These companies rely on ST??s memory components to store critical data in products that operate for 10?C20 years-from EVs to factory robots-where data loss would cause costly downtime, safety risks, or compliance failures. For engineers designing high-performance, long-lasting systems, ST??s M95 series delivers proven reliability and performance that reduces development risk.

Frequently Asked Questions (FAQ)

What is the M95512-DRMF3TG/K and how does it retain data without power?

The M95512-DRMF3TG/K is a 512Kbit high-speed SPI EEPROM from STmicroelectronics. It uses floating-gate transistor technology to retain data permanently without power-electrical signals program or erase individual bits, enabling flexible read/write operations. It retains data for 40 years at 105??C, making it ideal for long-lifespan systems like EVs or industrial machines that operate for decades without component replacement.

Why is 10MHz SPI speed important for industrial controllers?

Industrial controllers often need to read/write large datasets (e.g., machine calibration profiles, sensor logs) quickly to keep up with real-time production processes. A 10MHz SPI speed lets the M95512-DRMF3TG/K transfer data 10x faster than 1MHz generic EEPROMs. For a PLC loading a 64KB calibration file, a 1MHz EEPROM takes 512ms while this model takes 51.2ms-faster data transfer reduces controller active time, cuts energy use, and ensures timely responses to production line changes.

How does the 1??A standby current benefit battery-powered IoT devices?

Battery-powered IoT devices like wireless environmental sensors spend 90% of their time in standby mode, so minimizing standby power is critical. The 1??A standby current uses 67% less power than 3??A standard EEPROMs. This reduces total energy use by 33%-a sensor that lasts 6 months with a standard EEPROM lasts 8 months with this model. For remote deployments (e.g., agricultural fields), this eliminates 1?C2 maintenance trips annually, lowering operational costs and improving efficiency.

What makes this EEPROM suitable for automotive under-hood applications?

The M95512-DRMF3TG/K is AEC Q100 Grade 2 qualified, meaning it meets strict automotive standards for temperature, voltage, and durability. It operates from -40??C (cold winters) to +105??C (under-hood heat), surviving extreme temperature swings that damage commercial-grade EEPROMs. It also has 1M write cycles and 40-year data retention-ensuring it reliably stores critical BMS or sensor data for a vehicle??s 15+ year lifespan. Its SOIC package also fits seamlessly into existing under-hood PCB designs.

How do the protection features prevent unauthorized data changes or corruption?

It includes layered protection to safeguard critical data: software write protection lets users lock 8 separate memory blocks (e.g., locking calibration data while allowing new maintenance logs), and a hardware write protect pin disables all write operations when activated-even if software glitches or electrical noise trigger accidental writes. Together, these features reduce data corruption errors by 92% in automotive and industrial systems, preventing issues like incorrect EV BMS data or lost PLC calibration settings that could lead to equipment failure.