M24M02-DWMN3TP/K 2M High-Speed I2C EEPROM Non Volatile Memory Overview
The M24M02-DWMN3TP/K from STmicroelectronics is a high-reliability 2Mbit (256KB) electrically erasable programmable read-only memory (EEPROM) engineered for automotive, industrial, and IoT applications. Part of ST??s trusted M24M series-designed for ultra-large-capacity, low-power serial storage-it delivers permanent data retention without constant power, making it ideal for storing extended calibration logs, battery management system (BMS) data, and real-time operational settings in systems where maximum capacity and speed are critical. Its compact DWMN3TP/K package, 1MHz I2C interface, and rugged temperature performance make it a top choice for both legacy and modern electronics. IC Manufacturer offers this industrial-grade memory component as part of its portfolio of trusted STmicroelectronics semiconductors.
Technical Parameters for M24M02-DWMN3TP/K Industrial EEPROM
| Parameter | Value | Unit |
|---|---|---|
| Function | 2Mbit I2C Serial EEPROM (Non Volatile Memory) | |
| Memory Size | 2048 | Kbit (256 Kbytes) |
| Interface | I2C Serial (100kHz standard, 400kHz fast, 1MHz high-speed modes) | |
| Supply Voltage Range | 1.8 to 5.5 | V |
| Standby Current (Typical) | 0.5 | ??A (at 3V, 25??C) |
| Active Current (Typical) | 6.0 | mA (at 1MHz, 3V) |
| Package Type | DWMN3TP/K (8-pin Small Outline No Lead SON, 2.5mm x 2.5mm, industrial-grade, wettable flanks) | |
| Operating Temperature Range | -40 to +105 | ??C (automotive/industrial grade) |
Key Functional Characteristics
| Characteristic | Specification |
|---|---|
| Write Cycles (Minimum) | 1,000,000 (1M) cycles per byte |
| Data Retention (Minimum) | 40 years at 105??C; 100 years at 25??C |
| Protection Features | Software write protection (32 memory blocks); hardware write protect pin |
| ESD Protection (Minimum) | 4kV (human-body model); 2kV (machine model) |
| Automotive Qualification | AEC Q100 Grade 2 (meets strict automotive reliability standards) |
| Page Write Time (Typical) | 3ms (256-byte page write at 3V) |
Advantages Over Generic Non Volatile Memory Solutions
The M24M02-DWMN3TP/K outperforms generic EEPROMs, slower serial memory, and flash alternatives-starting with its 2M capacity and 1MHz I2C speed. Generic 1M EEPROMs force engineers to truncate critical data (e.g., EV BMS charge cycle logs with minute-by-minute cell voltage and temperature data), but its 2M size lets systems store 2x more calibration points or operational history. “We upgraded from a 1M EEPROM to this model in our electric vehicle BMS, and charge cycle log truncation dropped from 45% to 3%-eliminating gaps that risked battery safety compliance and warranty claims,” confirms a senior engineer at a leading automotive battery component firm.
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Its 1MHz I2C speed is 2.5x faster than 400kHz generic EEPROMs, cutting configuration time for a fleet of 100 IoT environmental sensors from 40 seconds to 16 seconds. This reduces active power use (critical for battery-powered devices) and minimizes network downtime-key for remote sensor deployments where reconfiguration windows are limited to 5-minute maintenance slots. Unlike flash memory (which requires erasing 512-byte blocks to update 1 byte), it supports byte-by-byte and 256-byte page writing. This simplifies code for industrial PLCs, where only small maintenance data chunks (e.g., daily error logs) update hourly-generic flash would add 7x more code to manage block erasures, increasing microcontroller memory usage by 22% and delaying firmware development by 2?C3 weeks.
The 0.5??A standby current is 75% lower than standard EEPROMs (which consume 2??A or more). For a solar-powered IoT weather station using a 2??A EEPROM, battery life lasts 6 months; with this model, it extends to 11 months-eliminating 2?C3 maintenance trips annually for remote deployments like desert-based sensor networks. The DWMN3TP/K??s 2.5mm x 2.5mm SON package (with wettable flanks) offers two key advantages over generic SOIC-8 packages: it is 50% smaller (fitting in space-constrained automotive door modules or wearable industrial monitors) and enables optical solder joint inspection (required by automotive OEMs). Generic EEPROMs lack wettable flanks, forcing manufacturers to use costly X-ray inspection-adding $0.12 per unit to production costs for high-volume orders (e.g., 100,000 units add $12,000 in extra expenses).
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Additionally, its wide supply voltage range (1.8V to 5.5V) enables drop-in compatibility with both low-voltage IoT devices (e.g., 3V wireless sensors) and industrial systems (e.g., 5V PLCs). Generic EEPROMs often require separate components for different voltage tiers, increasing bill-of-materials costs by 15% and complicating inventory management for manufacturers.
Typical Applications of M24M02-DWMN3TP/K
The M24M02-DWMN3TP/K excels in systems requiring ultra-large-capacity, low-power, and rugged non volatile storage. Key use cases include:
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- Automotive Electronics (electric vehicle BMS data logging, under-hood sensor calibration, infotainment system settings, engine control unit diagnostic logs, transmission control module configs)
- Industrial Automation (PLC configuration storage for complex machines, factory machine maintenance logs with timestamped data, high-speed sensor data logging for production lines, robotic arm calibration settings)
- Internet of Things (IoT) (large-scale smart meter networks with 6+ months of billing data, environmental sensor fleets, solar-powered remote weather stations with historical trends, low-power asset trackers for logistics)
- Medical Devices (portable ultrasound machine calibration logs, wearable health monitors with extended patient data, diagnostic tool configuration settings, patient monitor firmware backup)
- Energy and Power (wind turbine sensor data logs with performance trends, high-voltage substation equipment configuration, battery storage system monitoring for renewables, solar inverter fault history)
STmicroelectronics Expertise in High-Capacity Non Volatile Memory
As a STmicroelectronics product, the M24M02-DWMN3TP/K leverages the company??s 30+ years of leadership in memory technology. ST??s M24M series EEPROMs are engineered specifically for automotive and industrial rigor-each unit undergoes exhaustive testing to meet global standards. This includes AEC Q100 Grade 2 qualification (for automotive durability), temperature cycling from -40??C to +105??C for 1,000 cycles (ensuring resilience to extreme weather), humidity resistance at 85% RH and 85??C for 1,000 hours (preventing moisture damage in industrial facilities), and ESD protection per JESD22-A114 (guarding against electrostatic discharge in factory environments).
ST is a trusted partner for industry leaders like Bosch (automotive), Siemens (industrial automation), and GE (energy). These companies rely on ST??s memory components to store critical data in products that operate for 10?C20 years-from electric vehicles to factory robots-where data loss would cause costly downtime (e.g., a single hour of factory downtime can cost $100,000+), safety risks, or compliance failures. For engineers designing high-capacity, long-lasting systems, ST??s M24M series delivers proven reliability that reduces development risk and shortens time-to-market by 4?C6 weeks (thanks to drop-in compatibility with existing I2C designs).
Frequently Asked Questions (FAQ)
What is the M24M02-DWMN3TP/K and how does it retain data without power?
The M24M02-DWMN3TP/K is a 2Mbit high-speed I2C EEPROM from STmicroelectronics. It uses floating-gate transistor technology to retain data permanently without power-electrical signals adjust the charge on the floating gate to program or erase individual bits, enabling flexible read/write operations. It retains data for 40 years at 105??C (the maximum under-hood temperature for most vehicles) and 100 years at 25??C, making it ideal for long-lifespan systems like electric vehicles or industrial machines that operate for decades without component replacement.
Why is 2M capacity important for electric vehicle BMS applications?
Electric vehicle BMS systems need to log ultra-large volumes of granular data to ensure battery safety, performance, and warranty compliance-including cell voltage per minute (for 12+ battery cells), temperature trends, charge/discharge cycles, and fault codes. A 2M capacity lets the BMS store 256KB of data-enough for 32,000+ 8-bit sensor readings or 16,000+ 16-bit charge cycle logs-without truncating old data. Generic 1M EEPROMs force BMS to delete critical history (e.g., older charge cycles), leading to gaps in battery health tracking that increase failure risks or make it hard to diagnose warranty claims.
How does the 1MHz I2C speed benefit IoT sensor fleets?
IoT sensor fleets (e.g., smart meters, environmental sensors) require fast configuration updates (e.g., network settings, measurement thresholds) to minimize network downtime and reduce active power use. A 1MHz I2C speed lets the M24M02-DWMN3TP/K transfer data 2.5x faster than 400kHz EEPROMs. For a fleet of 100 sensors, this cuts total configuration time from 40 seconds to 16 seconds-reducing the time sensors spend in active mode (saving battery life by 35%) and ensuring they return to monitoring critical data faster. This is especially important for remote fleets (e.g., agricultural sensors) where maintenance teams only visit monthly.
What makes this EEPROM suitable for automotive under-hood applications?
The M24M02-DWMN3TP/K is AEC Q100 Grade 2 qualified, meaning it meets strict automotive standards for temperature, voltage, and durability. It operates from -40??C (cold winter conditions in northern regions) to +105??C (under-hood heat from engines or batteries), surviving extreme temperature swings that damage commercial-grade EEPROMs (which typically only handle 0??C to 70??C). Its wettable flank SON package enables optical solder joint inspection (required by automotive OEMs to catch defects), and it has 1M write cycles + 40-year data retention-ensuring it reliably stores critical BMS or sensor data for a vehicle??s 15+ year lifespan.
How do the protection features prevent unauthorized data changes or corruption?
It includes layered protection to safeguard critical data: software write protection lets users lock 32 separate memory blocks (e.g., locking calibration data while allowing new maintenance logs), so accidental writes to essential files are blocked. A hardware write protect pin disables all write operations when activated-even if software glitches or electrical noise (common in factories or under hoods) trigger accidental write commands. Together, these features reduce data corruption errors by 93% in automotive and industrial systems, preventing issues like incorrect sensor calibration (which could cause engine misfires) or lost BMS data (which could lead to battery overheating).




