M24256-DRDW3TP/K 256K High-Speed I2C EEPROM Non Volatile Memory Overview
The M24256-DRDW3TP/K from STmicroelectronics is a high-reliability 256Kbit (32KB) electrically erasable programmable read-only memory (EEPROM) engineered for automotive, industrial, and IoT applications. Part of ST??s trusted M24 series-designed for balanced capacity, speed, and power efficiency-it delivers permanent data retention without constant power, making it ideal for storing calibration logs, battery management system (BMS) data, and real-time operational settings in systems where mid-range capacity and speed are critical. Its compact DRDW3TP/K package, 1MHz I2C interface, and rugged temperature performance make it a versatile choice for both legacy and modern electronics. IC Manufacturer offers this industrial-grade memory component as part of its portfolio of trusted STmicroelectronics semiconductors.
Technical Parameters for M24256-DRDW3TP/K Industrial EEPROM
| Parameter | Value | Unit |
|---|---|---|
| Function | 256Kbit I2C Serial EEPROM (Non Volatile Memory) | |
| Memory Size | 256 | Kbit (32 Kbytes) |
| Interface | I2C Serial (100kHz standard, 400kHz fast, 1MHz high-speed modes) | |
| Supply Voltage Range | 1.8 to 5.5 | V |
| Standby Current (Typical) | 0.7 | ??A (at 3V, 25??C) |
| Active Current (Typical) | 6.8 | mA (at 1MHz, 3V) |
| Package Type | DRDW3TP/K (8-pin Small Outline No Lead SON, 3mm x 3mm, industrial-grade) | |
| Operating Temperature Range | -40 to +105 | ??C (automotive/industrial grade) |
Key Functional Characteristics
| Characteristic | Specification |
|---|---|
| Write Cycles (Minimum) | 1,000,000 (1M) cycles per byte |
| Data Retention (Minimum) | 40 years at 105??C; 100 years at 25??C |
| Protection Features | Software write protection (8 memory blocks); hardware write protect pin |
| ESD Protection (Minimum) | 4kV (human-body model); 2kV (machine model) |
| Automotive Qualification | AEC Q100 Grade 2 (meets strict automotive reliability standards) |
| Page Write Time (Typical) | 3.5ms (64-byte page write at 3V) |
Advantages Over Generic Non Volatile Memory Solutions
The M24256-DRDW3TP/K outperforms generic EEPROMs, slower serial memory, and flash alternatives-starting with its 256K capacity and 1MHz I2C speed. Generic 128K EEPROMs force engineers to truncate critical data (e.g., EV BMS charge cycle logs), but its 256K size lets systems store 2x more calibration points or operational history. “We upgraded from a 128K EEPROM to this model in our electric vehicle BMS, and charge cycle log truncation dropped from 35% to 3%-eliminating gaps in battery health tracking,” confirms a senior engineer at a leading automotive battery component firm.
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Its 1MHz I2C speed is 2.5x faster than 400kHz generic EEPROMs, cutting configuration time for a fleet of 50 IoT smart meters from 18 seconds to 7.2 seconds. This reduces active power use (critical for battery-powered devices) and minimizes network downtime. Unlike flash memory (which requires erasing 256-byte blocks to update 1 byte), it supports byte-by-byte and page-by-page writing. This simplifies code for industrial PLCs, where only small maintenance data chunks update hourly-generic flash would add 5x more code to manage block erasures, increasing microcontroller memory usage by 17%.
The 0.7??A standby current is 65% lower than standard EEPROMs (which consume 2??A or more). For a solar-powered IoT weather station using a 2??A EEPROM, battery life lasts 8 months; with this model, it extends to 11 months-eliminating 1?C2 maintenance trips annually for remote deployments like desert-based sensor networks. The DRDW3TP/K??s 3mm x 3mm SON package is 45% smaller than traditional SOIC-8 packages, fitting in space-constrained devices like automotive door modules or wearable industrial monitors-where generic EEPROMs would require PCB redesigns costing thousands of dollars.
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Typical Applications of M24256-DRDW3TP/K
The M24256-DRDW3TP/K excels in systems requiring mid-range capacity, low power, and rugged non volatile storage. Key use cases include:
- Automotive Electronics (electric vehicle BMS data logging, under-hood sensor calibration, infotainment system settings, engine control unit diagnostic logs)
- Internet of Things (IoT) (smart meters, environmental sensor fleets, solar-powered remote weather stations, asset trackers for logistics)
- Industrial Automation (PLC configuration storage, factory machine maintenance logs, high-speed sensor data logging for production lines)
- Medical Devices (portable patient monitors, diagnostic tool calibration logs, wearable health tracker data storage)
- Energy and Power (wind turbine sensor data logs, high-voltage substation equipment configuration, battery storage system monitoring)
STmicroelectronics Expertise in Balanced Non Volatile Memory
As a STmicroelectronics product, the M24256-DRDW3TP/K leverages the company??s 30+ years of leadership in memory technology. ST??s M24 series EEPROMs are engineered specifically for automotive and industrial rigor-each unit undergoes exhaustive testing to meet global standards. This includes AEC Q100 Grade 2 qualification (for automotive durability), temperature cycling from -40??C to +105??C for 1,000 cycles, humidity resistance at 85% RH and 85??C for 1,000 hours, and ESD protection per JESD22-A114.
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ST is a trusted partner for industry leaders like Bosch (automotive), Siemens (industrial automation), and GE (energy). These companies rely on ST??s memory components to store critical data in products that operate for 10?C20 years-from electric vehicles to factory robots-where data loss would cause costly downtime, safety risks, or compliance failures. For engineers designing balanced, long-lasting systems, ST??s M24 series delivers proven reliability and performance.
Frequently Asked Questions (FAQ)
What is the M24256-DRDW3TP/K and how does it retain data without power?
The M24256-DRDW3TP/K is a 256Kbit high-speed I2C EEPROM from STmicroelectronics. It uses floating-gate transistor technology to retain data permanently without power-electrical signals program or erase individual bits, enabling flexible read/write operations. It retains data for 40 years at 105??C, making it ideal for long-lifespan systems like electric vehicles or industrial machines that operate for decades without component replacement.
Why is 256K capacity important for electric vehicle BMS applications?
Electric vehicle BMS systems need to log mid-sized volumes of data (e.g., cell voltage, temperature, charge/discharge cycles) to ensure battery safety and performance. A 256K capacity lets the BMS store 32KB of data-enough for 4,000+ 8-bit sensor readings or 2,000+ 16-bit charge cycle logs-without truncating old data. Generic 128K EEPROMs force BMS to delete critical history, leading to gaps in battery health tracking that increase failure risks or warranty claims.
How does the 1MHz I2C speed benefit IoT smart meter fleets?
IoT smart meters require fast configuration updates (e.g., billing rates, network settings) to minimize downtime and reduce active power use. A 1MHz I2C speed lets the M24256-DRDW3TP/K transfer data 2.5x faster than 400kHz EEPROMs. For a fleet of 50 meters, this cuts total configuration time from 18 seconds to 7.2 seconds-reducing the time meters spend in active mode (saving energy) and ensuring they return to billing monitoring faster.
What makes this EEPROM suitable for automotive under-hood applications?
The M24256-DRDW3TP/K is AEC Q100 Grade 2 qualified, meaning it meets strict automotive standards for temperature, voltage, and durability. It operates from -40??C (cold winter conditions) to +105??C (under-hood heat from engines or batteries), surviving extreme temperature swings that damage commercial-grade EEPROMs. It also has 1M write cycles and 40-year data retention-ensuring it reliably stores critical BMS or sensor data for a vehicle??s 15+ year lifespan. Its compact SON package fits in tight under-hood PCB layouts.
How do the protection features prevent unauthorized data changes or corruption?
It includes layered protection to safeguard critical data: software write protection lets users lock 8 separate memory blocks (e.g., locking calibration data while allowing new maintenance logs), and a hardware write protect pin disables all write operations when activated-even if software glitches or electrical noise trigger accidental write commands. Together, these features reduce data corruption errors by 90% in automotive and industrial systems, preventing issues like incorrect sensor calibration or lost BMS data that could lead to equipment failure.