STIPQ3M60T-HL Overview
The STIPQ3M60T-HL is a high-performance silicon carbide (SiC) MOSFET designed for power conversion and industrial applications requiring efficiency and robustness. Featuring a 600 V rating and a 3 m?? on-resistance, this device excels in reducing conduction losses and improving thermal performance. With a half-bridge power module format, it simplifies system integration in compact designs. Its advanced packaging and low gate charge enhance switching speeds while maintaining reliability under demanding conditions. Engineers and sourcing specialists will find this component ideal for high-efficiency power supplies, motor drives, and renewable energy systems. For detailed technical data and ordering, visit IC Manufacturer.
STIPQ3M60T-HL Technical Specifications
| Parameter | Specification |
|---|---|
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 80 A (at 25??C) |
| On-Resistance (RDS(on)) | 3 m?? (max, at VGS = 20 V) |
| Gate Threshold Voltage (VGS(th)) | 2.5?C4.5 V |
| Input Capacitance (Ciss) | 750 pF (typical) |
| Turn-On Delay Time (td(on)) | 12 ns (typical) |
| Turn-Off Delay Time (td(off)) | 35 ns (typical) |
| Operating Junction Temperature (TJ) | -55 to +175 ??C |
| Package Type | Half-Bridge Power Module |
| Gate Charge (Qg) | 15 nC (typical) |
STIPQ3M60T-HL Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat generation.
- High Voltage Rating of 600 V: Enables operation in demanding industrial power stages and renewable energy converters.
- Fast Switching Speeds: Low gate charge and short delay times support high-frequency switching, enhancing power density.
- Robust Thermal Performance: Wide operating junction temperature range (-55 to 175 ??C) ensures reliability under harsh conditions.
- Half-Bridge Module Packaging: Simplifies layout design and reduces parasitic inductances, facilitating compact power assemblies.
- Silicon Carbide Technology: Provides superior efficiency and thermal conductivity compared to traditional silicon devices.
Typical Applications
- High-efficiency power supplies and DC-DC converters in industrial automation requiring compact, reliable power stages with minimal losses.
- Electric motor drives and inverters for industrial machinery, leveraging fast switching and thermal robustness to improve performance.
- Renewable energy systems such as solar inverters and wind turbine converters, benefiting from SiC technology??s high voltage and temperature tolerance.
- Uninterruptible power supplies (UPS) and backup power systems, where reliable high-voltage switching and low conduction losses are critical.
STIPQ3M60T-HL Advantages vs Typical Alternatives
This device offers significant advantages over traditional silicon MOSFETs and IGBTs, including lower on-resistance and faster switching speeds due to its silicon carbide construction. The result is enhanced efficiency and reduced thermal stress. Its half-bridge module packaging reduces parasitic elements and simplifies system design. Compared to discrete solutions, it provides better integration and reliability, making it a preferred choice for demanding industrial power conversion applications.
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STIPQ3M60T-HL Brand Info
Manufactured by STMicroelectronics, a global leader in semiconductor technology, this silicon carbide MOSFET module reflects the company’s commitment to innovation in power electronics. STMicroelectronics specializes in advanced SiC devices that deliver higher efficiency, robustness, and integration for industrial and automotive markets. The STIPQ3M60T-HL combines ST??s expertise in wide bandgap semiconductors and power module design,
