STIPN2M50T-HL Infineon IGBT Module 2x 50A 1200V Half-Bridge Power Package

STIPN2M50T-HL Overview

The STIPN2M50T-HL is a high-performance insulated-gate bipolar transistor (IGBT) module designed for industrial power applications requiring robust switching and high efficiency. It integrates a 2nd generation IGBT chip optimized for low conduction and switching losses, ensuring reliable operation in demanding environments. With a voltage rating of 1200 V and current handling capability of 50 A, this module supports medium-power converters, motor drives, and industrial inverters. Its compact design and thermal management features enable seamless integration into power electronics systems. For more detailed information, visit IC Manufacturer.

STIPN2M50T-HL Technical Specifications

STIPN2M50T-HL Key Features

• High Voltage Rating: Supports up to 1200 V, enabling use in medium-voltage industrial applications with ease.
• Low Switching Losses: Advanced IGBT technology reduces switching losses, improving overall system efficiency and thermal performance.
• Robust Thermal Management: Designed to operate reliably up to 150 ??C junction temperature, ensuring durability in harsh environments.
• Compact Half-Bridge Module: Simplifies power stage design and integration, reducing PCB area and assembly complexity.

Typical Applications

• Industrial motor drives requiring efficient and reliable power switching to control speed and torque with high precision and minimal energy loss.
• Power converters in renewable energy systems such as solar inverters, where high voltage capability and efficiency are critical.
• Uninterruptible Power Supplies (UPS) that demand fast switching and reliable operation under varying load conditions.
• General purpose industrial inverters and power supplies for automation equipment and factory machinery.

STIPN2M50T-HL Advantages vs Typical Alternatives

This IGBT module offers superior switching performance and thermal robustness compared to standard discrete transistors or older-generation modules. Its low conduction and switching losses contribute to higher system efficiency and reduced cooling requirements. The integrated half-bridge design simplifies layout and assembly, enhancing reliability and reducing total cost of ownership in industrial power electronics.

STIPN2M50T-HL Brand Info

The STIPN2M50T-HL is manufactured by STMicroelectronics, a global leader in semiconductor innovation and manufacturing. STMicroelectronics specializes in power electronics and discrete devices, delivering industry-leading IGBT modules tailored for industrial and automotive applications. This module reflects ST??s commitment to high-performance, energy-efficient solutions that enable advanced power conversion and motor control systems worldwide.

FAQ

What is the maximum operating voltage for this IGBT module?

The module is rated for a maximum collector-emitter voltage of 1200 V, making it suitable for medium-voltage industrial power applications and ensuring safe operation within this voltage range.

How does the STIPN2M50T-HL handle thermal stress in high-temperature environments?

Designed with a maximum junction temperature of 150 ??C, the module incorporates robust thermal management features. This allows it to maintain performance and reliability even under elevated temperature conditions typical in industrial settings.

Is the module suitable for high-frequency switching applications?

Yes, with turn-on and turn-off times of approximately 230 ns and 600 ns respectively, the device supports efficient high-frequency switching, which improves overall power converter efficiency and responsiveness.

Can this module be used in renewable energy inverter designs?

Absolutely. Its voltage and current ratings, combined with low switching losses, make it ideal for solar and wind