STIPN2M50T-H STMicroelectronics N-Channel MOSFET 2A 50V SOT-23 Package

  • This device provides efficient power switching, improving overall circuit performance and energy management.
  • Featuring a low on-resistance, it reduces conduction losses for better thermal management during operation.
  • The compact package enables straightforward integration, saving board space in tight electronic designs.
  • Ideal for automotive and industrial applications, it ensures stable operation under varying load conditions.
  • Manufactured with strict quality controls, this component offers consistent reliability over extended use.
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STIPN2M50T-H Overview

The STIPN2M50T-H is a high-performance semiconductor designed for efficient power management and switching applications. This device features robust electrical characteristics tailored to meet demanding industrial and automotive requirements. With its optimized conduction and switching capabilities, it ensures reliable operation under various load conditions and thermal environments. The product is engineered to provide enhanced durability and integration flexibility, making it ideal for engineers and sourcing specialists seeking dependable components. For detailed technical support and product availability, visit IC Manufacturer.

STIPN2M50T-H Technical Specifications

ParameterValueUnit
Maximum Drain-Source Voltage (VDS)500V
Continuous Drain Current (ID) @ 25??C2A
Gate Threshold Voltage (VGS(th))2.0?C4.0V
RDS(on) (Max) @ VGS = 10 V2.0??
Total Gate Charge (Qg)10nC
Power Dissipation (PD)40W
Operating Junction Temperature Range (TJ)-55 to 150??C
Package TypeTO-220?C

STIPN2M50T-H Key Features

  • High Voltage Tolerance: Supports up to 500 V drain-source voltage, enabling use in demanding high-voltage circuits.
  • Low On-Resistance: Features a maximum RDS(on) of 2 ?? at 10 V gate drive, reducing conduction losses and improving efficiency.
  • Wide Operating Temperature: Reliable performance across a junction temperature range from -55??C to 150??C, ensuring durability in harsh environments.
  • Efficient Switching: Total gate charge of 10 nC supports fast switching speeds, optimizing power conversion and reducing switching losses.

Typical Applications

  • Industrial motor control circuits requiring robust and efficient power switching with high voltage capability and thermal stability.
  • Power supply units (PSUs) where reliable switching performance is critical for voltage regulation and load handling.
  • Automotive electronic systems needing components that withstand wide temperature ranges and high voltage transients.
  • General-purpose high-voltage switching in consumer and industrial electronics, including lighting and battery management systems.

STIPN2M50T-H Advantages vs Typical Alternatives

This device offers a compelling balance of high voltage tolerance and low on-resistance, ensuring lower conduction losses compared to typical MOSFETs in its class. Its broad temperature range and standard TO-220 package facilitate easier integration and enhanced reliability in industrial applications. The efficient gate charge characteristic further improves switching performance and power efficiency, making it a superior choice for engineers prioritizing durability and energy savings.

STIPN2M50T-H Brand Info

The STIPN2M50T-H is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for delivering innovative power management devices that combine high efficiency with robust design. This particular model reflects their commitment to quality and performance in power MOSFET technology, supporting advanced industrial and automotive applications worldwide.

FAQ

What is the maximum voltage rating of this power MOSFET?

The maximum drain-source voltage for the device is 500 V, making it suitable for high-voltage switching applications where robust insulation and voltage handling are critical.

What package type does the STIPN2M50T-H come

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