STH13N120K5-2AG Infineon IGBT Transistor 1200V 13A TO-247 Package

STH13N120K5-2AG Overview

The STH13N120K5-2AG is a high-performance silicon carbide (SiC) MOSFET designed for efficient power switching in demanding industrial applications. Offering a breakdown voltage of 1200V and a low on-resistance, this device supports high-speed switching with minimal losses, enhancing overall system efficiency. Its robust ruggedness and thermal stability make it suitable for use in inverters, power supplies, and motor drives. Engineered for reliability and optimized for high-frequency operation, this transistor facilitates compact and energy-efficient designs. For detailed technical data and procurement, visit IC Manufacturer.

STH13N120K5-2AG Technical Specifications

STH13N120K5-2AG Key Features

• High-voltage capability: Rated at 1200V, it ensures reliable operation in high-power applications, reducing risk of device failure.
• Low on-resistance: The 75 m?? Rds(on) minimizes conduction losses, improving overall efficiency and thermal management.
• Fast switching speed: Optimized gate charge supports rapid switching, which benefits high-frequency power conversion systems.
• Enhanced thermal performance: The device can operate up to 175??C junction temperature, supporting demanding industrial environments.

Typical Applications

• Industrial motor drives requiring efficient and reliable high-voltage power switching to optimize energy consumption and system performance.
• Uninterruptible Power Supplies (UPS) where low losses and high switching speeds improve backup power efficiency.
• Solar inverters that benefit from robust high-voltage MOSFETs to maximize energy conversion and maintain thermal stability.
• Switch-mode power supplies (SMPS) that demand compact, high-efficiency power transistors for improved power density and reliability.

STH13N120K5-2AG Advantages vs Typical Alternatives

This transistor offers a compelling advantage due to its combination of high breakdown voltage and low on-resistance, which reduces conduction losses compared to silicon counterparts. The enhanced switching speed and thermal tolerance improve efficiency and reliability in power electronics systems. Its TO-247 package supports effective heat dissipation, enabling higher power density. These features make it a preferred choice for engineers seeking robust, efficient, and compact SiC MOSFET solutions.

STH13N120K5-2AG Brand Info

The STH13N120K5-2AG is part of STMicroelectronics?? portfolio of silicon carbide power transistors. STMicroelectronics is a leading global semiconductor manufacturer known for its innovation in power management and energy-efficient components. This specific MOSFET leverages ST??s advanced SiC technology, delivering superior performance in harsh industrial environments and high-power applications. The product is supported by extensive technical documentation and global distribution channels, ensuring reliable supply and technical support.

FAQ

What is the maximum voltage rating for this SiC MOSFET?

The device is rated for a maximum drain-source voltage of 1200V, making it suitable for high-voltage power switching applications commonly found in industrial motor drives and power supplies.