STGWT60H65DFB Overview
The STGWT60H65DFB is a high-performance power transistor designed for efficient switching and power management in industrial and automotive applications. Featuring a 650 V drain-source voltage and a continuous drain current of 60 A, this device enables robust operation in demanding environments. It offers low on-resistance to minimize conduction losses, improving overall system efficiency. Its rugged construction ensures reliability under thermal and electrical stress, making it suitable for power converters, motor drives, and renewable energy systems. This transistor is part of a trusted portfolio from IC Manufacturer, delivering advanced semiconductor solutions for critical industrial technology needs.
STGWT60H65DFB Technical Specifications
| Parameter | Specification |
|---|---|
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) | 60 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Maximum Power Dissipation (PD) | 300 W |
| Typical On-Resistance (RDS(on)) at VGS = 10 V | 12 m?? |
| Gate Charge (Qg) | 80 nC (typical) |
| Operating Junction Temperature (Tj) | -55 to 175 ??C |
| Package Type | DFN 8×8 mm (dual flat no-lead) |
STGWT60H65DFB Key Features
- High voltage capability: Supports up to 650 V, enabling its use in high-voltage power conversion and industrial motor control.
- Low on-resistance: Minimizes conduction losses, which enhances energy efficiency and reduces heat generation.
- Robust thermal performance: With a maximum junction temperature of 175 ??C, it withstands demanding thermal conditions for reliable operation.
- Compact DFN package: Facilitates improved thermal dissipation and allows high-density PCB layouts, benefiting space-constrained designs.
Typical Applications
- Industrial motor drives requiring high current handling and efficient switching for precise speed and torque control.
- Renewable energy inverters where high voltage and low conduction losses are critical for system efficiency.
- Power supplies and converters in automation systems demanding robust performance and reliability.
- Automotive electronics including electric vehicle power modules that operate under harsh thermal and electrical conditions.
STGWT60H65DFB Advantages vs Typical Alternatives
This device offers superior performance with its combination of high voltage rating and low on-resistance, enabling efficient power handling that reduces energy losses. Compared to typical alternatives, it provides enhanced thermal resilience and compact packaging, which supports better integration into modern industrial systems. Its reliable switching characteristics and robust design contribute to longer operating life and improved system stability.
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STGWT60H65DFB Brand Info
The STGWT60H65DFB is part of the semiconductor portfolio offered by STMicroelectronics, a global leader in advanced power transistor technology. STMicroelectronics specializes in providing innovative and energy-efficient solutions tailored for industrial, automotive, and consumer electronics markets. This product benefits from the company??s expertise in silicon power devices, ensuring high quality, reliability, and performance adherence to international standards.
FAQ
What is the maximum voltage rating of the STGWT60H65DFB?
The maximum drain-source voltage rating of this transistor is 650 V, making it suitable for high-voltage power electronics applications. This ensures safe operation up to this voltage without the risk of breakdown under normal conditions.
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What package does this transistor use and why is it important?
This device is housed in a DFN 8×8 mm package, which offers excellent thermal dissipation and allows for compact PCB layouts. This package type helps maintain device performance by efficiently
