STGWA50HP65FB2 Overview
The STGWA50HP65FB2 is a high-performance silicon carbide (SiC) MOSFET designed to optimize power conversion efficiency and thermal management in industrial and automotive applications. Featuring a robust 650 V blocking voltage and a low RDS(on) of 50 m??, this device supports high-frequency switching with minimal conduction losses. Its trench-gate technology enables fast switching speeds and reduced switching losses, making it ideal for power inverters, motor drives, and power supplies. Manufactured with advanced process controls, the device ensures reliable operation under demanding electrical and thermal conditions. For detailed technical support and sourcing, visit IC Manufacturer.
STGWA50HP65FB2 Technical Specifications
| Parameter | Specification |
|---|---|
| Technology | Silicon Carbide (SiC) MOSFET |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) @ 25??C | 50 A |
| RDS(on) (Max) @ VGS=20 V | 50 m?? |
| Gate Threshold Voltage (VGS(th)) | 3.0 V (Min) ?C 5.0 V (Max) |
| Gate Charge (Qg) | ~40 nC |
| Operating Junction Temperature (Tj) | -55??C to +175??C |
| Package Type | TO-247-3L |
STGWA50HP65FB2 Key Features
- High blocking voltage of 650 V: Enables reliable operation in demanding high-voltage power systems.
- Low RDS(on) of 50 m??: Minimizes conduction losses, improving overall system efficiency.
- Trench-gate SiC MOSFET technology: Delivers fast switching speeds and reduced switching losses for enhanced power density.
- Wide operating junction temperature range: Supports robust performance in harsh thermal environments, up to 175??C.
- Compact TO-247 package: Facilitates easy integration and effective thermal management in power modules.
Typical Applications
- Power inverters for renewable energy systems, where high efficiency and thermal performance are critical for maximizing energy conversion.
- Electric vehicle (EV) motor drives requiring fast switching and high-voltage tolerance for improved drivetrain efficiency.
- Industrial power supplies that demand reliable switching at elevated temperatures and voltages.
- Uninterruptible power supplies (UPS) and energy storage systems benefiting from the device??s low conduction and switching losses.
STGWA50HP65FB2 Advantages vs Typical Alternatives
This device offers superior switching performance and thermal stability compared to conventional silicon MOSFETs due to its silicon carbide technology. The lower RDS(on) and higher voltage rating enable reduced power losses and improved efficiency, crucial for high-performance industrial and automotive applications. Its trench-gate design ensures faster switching speeds, which translates into smaller, lighter power systems. Additionally, the extended temperature tolerance enhances reliability under harsh operating conditions, making it an advantageous choice over typical silicon-based alternatives.
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STGWA50HP65FB2 Brand Info
The STGWA50HP65FB2 is a product of STMicroelectronics, a global leader in semiconductor and power electronics solutions. Recognized for pioneering silicon carbide MOSFET technologies, STMicroelectronics combines innovation with quality manufacturing to deliver devices optimized for power efficiency, thermal performance, and reliability. This specific MOSFET is part of their SiC portfolio tailored for industrial and automotive sectors, supporting the growing demand for energy-efficient and high-power-density systems worldwide.
FAQ
What is the maximum voltage rating of the STGWA50HP65FB2?
The maximum drain-source voltage rating is
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