STGWA30M65DF2 STMicroelectronics 30A 650V IGBT Transistor TO-247 Package

STGWA30M65DF2 Overview

The STGWA30M65DF2 is a high-performance 650 V N-channel MOSFET designed for efficient power switching in industrial and automotive applications. Featuring a robust trench-gate structure and advanced planar technology, it delivers low on-resistance and fast switching capabilities. This transistor supports high current handling with excellent thermal stability, making it suitable for demanding environments. Its rugged design ensures reliability and longevity in power conversion systems, motor drives, and power supplies. For engineers and sourcing specialists seeking a balance of efficiency and durability, the STGWA30M65DF2 offers a compelling solution from IC Manufacturer.

STGWA30M65DF2 Technical Specifications

STGWA30M65DF2 Key Features

• Low On-Resistance: Minimizes conduction losses, enhancing overall system efficiency and reducing heat dissipation in power circuits.
• High Voltage Rating: Supports up to 650 V, enabling use in high-voltage industrial and automotive power applications.
• Fast Switching Performance: Enables efficient operation in switching regulators and inverters, improving dynamic response and reducing switching losses.
• Robust Thermal Stability: Maintains performance across a wide temperature range (-55??C to 150??C), ensuring reliability in harsh environments.

Typical Applications

• Industrial motor drives requiring efficient high-voltage switching and reliable thermal performance for long operational life.
• Power supply units (PSUs) and DC-DC converters where low on-resistance and fast switching reduce energy loss and improve efficiency.
• Electric vehicle (EV) powertrain components benefiting from high voltage tolerance and robust current handling for traction control.
• Inverter circuits in renewable energy systems such as solar inverters, demanding stable switching performance and thermal management.

STGWA30M65DF2 Advantages vs Typical Alternatives

The device offers superior performance with its low on-resistance and high voltage capability, which reduces conduction and switching losses compared to typical MOSFET alternatives. Its fast switching speed improves power efficiency, while the robust thermal characteristics enhance reliability in industrial and automotive applications. Integration in TO-247 package facilitates effective heat dissipation and ease of assembly, making it a preferred choice for designers prioritizing power density and operational stability.

STGWA30M65DF2 Brand Info

This transistor is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power devices tailored for industrial, automotive, and consumer electronics markets. The STGWA30M65DF2 reflects ST??s commitment to high-efficiency power management and robust device design, combining advanced trench technology and rigorous quality standards. It is part of ST??s extensive portfolio of power MOSFETs designed to meet demanding electrical and thermal requirements in modern electronics systems.

FAQ

What is the maximum drain-source voltage rating of the STGWA30M65DF2?

The maximum drain-source voltage (V_DS) rating of this device is 650 V, making it suitable for high-voltage industrial and automotive applications where robust voltage handling is essential.

How does the low on-resistance improve device efficiency?

Low on-resistance (R_DS(on)) reduces the power lost as heat during conduction, increasing overall efficiency